DOI: 10.1143/jjap.38.1115. Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP

Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP

10.1143/jjap.38.1115

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The reaction and/or diffusion in the Ti metallizing Al/Ti/n-InP contacts and their correlation with electrical properties have been studied. In the as-deposited Al/Ti/InP contact, interaction between Ti and P and outdiffusion of In into the Ti layer were observed in the initial stage of the reaction process. The reaction between Ti and P resulting in Ti-P compounds and the segregation of decomposed In proceeded during rapid thermal annealing (RTA) treatment, and a stable contact configuration of Al/Ti/In/Ti-P/InP was obtained after RTA treatment at 600°C for 20 s. An extremely low Schottky barrier height of 0.14 eV was obtained for the as-deposited contact. An ohmic I–V characteristic of the contact without Schottky barrier is demonstrated after RTA treatment. The formation of stable Ti-P compounds seems to be related to the ohmic behavior of the contacts.

Bibliography

Takeyama, M. B., Noya, A., & Hasegawa, T. (1999). Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP. Japanese Journal of Applied Physics, 38(2S), 1115.

Authors 3

Mayumi B. Takeyama (first)
Atsushi Noya (additional)
TamotsuHashizume Hasegawa (additional)

References 19 Referenced 8

10.1007/BF02671227 / J. Electron. Mater. (1994)
10.1063/1.362655 / J. Appl. Phys. (1996)
10.1016/S0040-6090(97)00439-2 / Thin Solid Films (1997)
10.1016/S0921-5107(96)01666-2 / Mater. Sci. & Eng. (1996)
10.1063/1.344986 / J. Appl. Phys. (1990)
10.1116/1.583723 / J. Vac. Sci. Technol. (1987)
10.1016/0040-6090(85)90269-X / Thin Solid Films (1985)
10.1016/0040-6090(92)90571-R / Thin Solid Films (1992)
{'key': ''}
{'key': ''}
{'key': ''}
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10.1063/1.363246 / J. Appl. Phys. (1996)
10.3891/acta.chem.scand.22-1942 / Acta Chem. Scandinavica (1968)
{'key': '', 'first-page': '24', 'volume': '27', 'year': '1998', 'journal-title': 'J. Electron. Mater.'} / J. Electron. Mater. (1998)
{'year': '1990', 'key': ''} (1990)
{'key': ''}
{'year': '1976', 'key': ''} (1976)
{'year': '1993', 'key': ''} (1993)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:59 a.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:32 a.m.)
Issued	26 years, 6 months ago (Feb. 1, 1999)
Published	26 years, 6 months ago (Feb. 1, 1999)
Published Print	26 years, 6 months ago (Feb. 1, 1999)

Funders 0

None

BibTeX

@article{Takeyama_1999, title={Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.1115}, DOI={10.1143/jjap.38.1115}, number={2S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Takeyama, Mayumi B. and Noya, Atsushi and Hasegawa, TamotsuHashizume}, year={1999}, month=feb, pages={1115} }

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