Abstract
Insertion of a thin film of aluminum oxide (Al2O3) at the interface of electrodes and organic layers has been investigated. Insertion of a thin film of Al2O3 at the interface of the ITO anode and the diamine derivative (TPD) layers, as well as at the interface of the 8-hydroxyquinoline aluminum (Alq3) and the Mg:Ag cathode in the electroluminescent (EL) diode has been examined. The insertion of an Al2O3 layer with a proper thickness was observed to enhances the emission efficiency of the device. The mechanism of quantum efficiency enhancement of the device was studied.
References
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Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 1, 2002, 6:27 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 14, 2022, 11:37 a.m.) |
Indexed | 2 months ago (June 26, 2025, 8:46 a.m.) |
Issued | 27 years, 1 month ago (July 1, 1998) |
Published | 27 years, 1 month ago (July 1, 1998) |
Published Print | 27 years, 1 month ago (July 1, 1998) |
@article{Yoshitaka_Kurosaka_1998, title={Improvement of Electrode/Organic Layer Interfaces by the Insertion of Monolayer-like Aluminum Oxide Film}, volume={37}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.37.l872}, DOI={10.1143/jjap.37.l872}, number={7B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yoshitaka Kurosaka, Yoshitaka Kurosaka and Norio Tada, Norio Tada and Yutaka Ohmori, Yutaka Ohmori and Katsumi Yoshino, Katsumi Yoshino}, year={1998}, month=jul, pages={L872} }