DOI: 10.1143/jjap.37.l479. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

10.1143/jjap.37.l479

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

High-efficiency amber InGaN single-quantum-well (SQW) structure light-emitting diodes (LEDs) with a luminous efficiency of 10 lm/W were developed. At a current of 20 mA, the external quantum efficiency, the output power and the emission wavelength of the amber InGaN SQW structure LEDs were 3.3%, 1.4 mW and 594 nm, respectively. The output power of InGaN LEDs was about twice as high as that of AlInGaP LEDs. There was a large difference in the temperature dependence of the output power between InGaN and AlInGaP LEDs. When the ambient temperature was increased from room temperature to 80°C, the output power of AlInGaP LEDs decreased dramatically. On the other hand, the output power of the InGaN LEDs remained almost constant.

Bibliography

Mukai, T., Narimatsu, H., & Nakamura, S. (1998). Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures. Japanese Journal of Applied Physics, 37(5A), L479.

Authors 3

Takashi Mukai (first)
Hiroki Narimatsu (additional)
Shuji Nakamura (additional)

References 9 Referenced 148

{'year': '1997', 'key': ''} (1997)
10.1143/JJAP.34.L1332 / Jpn. J. Appl. Phys. (1995)
{'key': ''}
10.1143/JJAP.34.L797 / Jpn. J. Appl. Phys. (1995)
{'year': '1997', 'key': ''} (1997)
{'year': '1997', 'key': ''} (1997)
10.1063/1.117683 / Appl. Phys. Lett. (1996)
10.1063/1.116981 / Appl. Phys. Lett. (1996)
10.1103/PhysRevB.55.1938R / Phys. Rev. B (1997)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:45 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:34 a.m.)
Indexed	5 months ago (March 31, 2025, 4:43 p.m.)
Issued	27 years, 4 months ago (May 1, 1998)
Published	27 years, 4 months ago (May 1, 1998)
Published Print	27 years, 4 months ago (May 1, 1998)

Funders 0

None

BibTeX

@article{Mukai_1998, title={Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures}, volume={37}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.37.l479}, DOI={10.1143/jjap.37.l479}, number={5A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Mukai, Takashi and Narimatsu, Hiroki and Nakamura, Shuji}, year={1998}, month=may, pages={L479} }

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