DOI: 10.1143/jjap.37.l151. Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate

Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate

10.1143/jjap.37.l151

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Epitaxial titanium aluminum nitride, Ti1-x Al x N(100) (0≦x<0.5), was grown on Si(100) substrates at 600°C by low-energy reactive ion beam deposition using N2 + ion beam irradiation with 100 eV energy and Ti and Al simultaneous evaporation. The epitaxial relationship was confirmed to be Ti1-x Al x N(100)//Si(100), Ti1-x Al x N<110>//Si<110> by X-ray diffraction (XRD) and in situ reflection high-energy electron diffraction (RHEED). Although the electrical resistivity increased exponentially with x, the values remained on the order of 10-4 Ω·cm. Using the Ti1-x Al x N buffer layer, we have successfully fabricated a capacitor with an epitaxial (Ba, Sr)TiO3 film on a Si substrate.

Bibliography

Yanase, N., Sano, K., Abe, K., & Kawakubo, T. (1998). Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate. Japanese Journal of Applied Physics, 37(2A), L151.

Authors 4

Naoko Yanase (first)
Kenya Sano (additional)
Kazuhide Abe (additional)
Takashi Kawakubo (additional)

References 14 Referenced 9

{'key': ''}
10.1063/1.107568 / Appl. Phys. Lett. (1992)
10.1016/0040-6090(95)06875-9 / Thin Solid Films (1995)
10.1143/JJAP.34.3266 / Jpn. J. Appl. Phys. (1995)
10.1063/1.328659 / J. Appl. Phys. (1981)
{'key': '', 'first-page': '83', 'volume': '37', 'year': '1988', 'journal-title': 'Zairyou'} / Zairyou (1988)
10.1557/JMR.1993.1093 / J. Mater. Res. (1993)
10.1063/1.345664 / J. Appl. Phys. (1990)
10.1016/0040-6090(91)90262-V / Thin Solid Films (1991)
10.1016/0040-6090(93)90244-J / Thin Solid Films (1993)
10.1063/1.359120 / J. Appl. Phys. (1995)
10.1149/1.2422690 / J. Electrochem. Soc. (1969)
10.1007/BF02680586 / Metall. Trans. (1972)
{'key': ''}

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:45 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:29 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.)
Issued	27 years, 6 months ago (Feb. 1, 1998)
Published	27 years, 6 months ago (Feb. 1, 1998)
Published Print	27 years, 6 months ago (Feb. 1, 1998)

Funders 0

None

BibTeX

@article{Yanase_1998, title={Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate}, volume={37}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.37.l151}, DOI={10.1143/jjap.37.l151}, number={2A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yanase, Naoko and Sano, Kenya and Abe, Kazuhide and Kawakubo, Takashi}, year={1998}, month=feb, pages={L151} }

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