DOI: 10.1143/jjap.37.4482. Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization

Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization

10.1143/jjap.37.4482

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Oxygen-containing Pt and Pt oxide thin films were prepared by reactive sputtering in Ar and O2 gas atmosphere and effects of oxygen flow ratio on crystallinity, chemical bonding state and resistivity were studied. Polycrystalline oxygen-containing Pt and amorphous Pt oxide thin films were obtained at O2 flow ratios below 20% and above 30%, respectively. It is confirmed that these films are composed of the mixture of Pt, PtO and PtO2 and the oxygen content in these films increases with an increase in the O2 flow ratio. Though PtOx films with x ≤0.6 show low resistivity with metallic conduction, those with higher oxygen content show semiconducting characteristics and their resistivity increases with increasing oxygen content.

Bibliography

Yoshio Abe, Y. A., Hideto Yanagisawa, H. Y., & Katsutaka Sasaki, K. S. (1998). Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization. Japanese Journal of Applied Physics, 37(8R), 4482.

Authors 3

Yoshio Abe Yoshio Abe (first)
Hideto Yanagisawa Hideto Yanagisawa (additional)
Katsutaka Sasaki Katsutaka Sasaki (additional)

References 14 Referenced 48

{'key': '', 'first-page': '1564', 'volume': 'E76-C', 'year': '1993', 'journal-title': 'IEICE Trans. Electron.'} / IEICE Trans. Electron. (1993)
10.1080/10584589308216687 / Integrat. Ferroelectr. (1993)
10.1143/JJAP.35.4880 / Jpn. J. Appl. Phys. (1996)
10.1063/1.111396 / Appl. Phys. Lett. (1994)
10.1143/JJAP.34.5184 / Jpn. J. Appl. Phys. (1995)
10.1143/JJAP.35.2210 / Jpn. J. Appl. Phys. (1996)
10.1016/0022-5088(79)90185-1 / J. Less-Common. Met. (1979)
10.1063/1.347255 / J. Appl. Phys. (1991)
10.1063/1.362341 / J. Appl. Phys. (1996)
{'year': '1992', 'key': ''} (1992)
10.1021/ac60353a050 / Anal. Chem. (1975)
10.1103/PhysRevB.39.12903 / Phys. Rev. B (1989)
10.1039/f19757100298 / J. Chem. Soc. Faraday Trans. 1 (1975)
10.1143/JJAP.37.3457 / Jpn. J. Appl. Phys. (1998)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:27 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:15 p.m.)
Indexed	2 months, 1 week ago (June 19, 2025, 12:28 a.m.)
Issued	27 years ago (Aug. 1, 1998)
Published	27 years ago (Aug. 1, 1998)
Published Print	27 years ago (Aug. 1, 1998)

Funders 0

None

BibTeX

@article{Yoshio_Abe_1998, title={Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization}, volume={37}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.37.4482}, DOI={10.1143/jjap.37.4482}, number={8R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yoshio Abe, Yoshio Abe and Hideto Yanagisawa, Hideto Yanagisawa and Katsutaka Sasaki, Katsutaka Sasaki}, year={1998}, month=aug, pages={4482} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        19
      ]
    ],
    "date-time": "2025-06-19T04:28:04Z",
    "timestamp": 1750307284941,
    "version": "3.37.3"
  },
  "reference-count": 14,
  "publisher": "IOP Publishing",
  "issue": "8R",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1998,
            8,
            1
          ]
        ],
        "date-time": "1998-08-01T00:00:00Z",
        "timestamp": 901929600000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1998,
            8,
            1
          ]
        ],
        "date-time": "1998-08-01T00:00:00Z",
        "timestamp": 901929600000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        8,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n  Oxygen-containing Pt and Pt  \n  oxide thin films were  \n  prepared by reactive sputtering in Ar and O<jats:sub>2</jats:sub> gas atmosphere and effects  \n  of oxygen flow ratio on crystallinity, chemical bonding state and  \n  resistivity were studied. \n  Polycrystalline oxygen-containing Pt and amorphous Pt oxide thin films were obtained  \n  at O<jats:sub>2</jats:sub>  \n  flow ratios below 20% and above 30%, respectively. It is confirmed that  \n  these films are composed of the mixture of Pt, PtO and PtO<jats:sub>2</jats:sub> and the oxygen  \n  content in these films   \n  increases with an increase in the O<jats:sub>2</jats:sub> flow ratio.  \n  Though PtO<jats:sub>x</jats:sub> films with <jats:italic>x</jats:italic> \u22640.6  show low resistivity with metallic  \n  conduction, those with higher oxygen content show semiconducting  \n  characteristics and their  \n  resistivity increases with increasing oxygen content. \n  </jats:p>",
  "DOI": "10.1143/jjap.37.4482",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        1
      ]
    ],
    "date-time": "2002-10-01T22:27:07Z",
    "timestamp": 1033511227000
  },
  "page": "4482",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 48,
  "title": "Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films   by Reactive Sputtering and Their Characterization",
  "prefix": "10.35848",
  "volume": "37",
  "author": [
    {
      "given": "Yoshio Abe",
      "family": "Yoshio Abe",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Hideto Yanagisawa",
      "family": "Hideto Yanagisawa",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Katsutaka Sasaki",
      "family": "Katsutaka Sasaki",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "first-page": "1564",
      "volume": "E76-C",
      "year": "1993",
      "journal-title": "IEICE Trans. Electron."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "321",
      "DOI": "10.1080/10584589308216687",
      "volume": "3",
      "year": "1993",
      "journal-title": "Integrat. Ferroelectr."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "4880",
      "DOI": "10.1143/JJAP.35.4880",
      "volume": "35",
      "year": "1996",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2967",
      "DOI": "10.1063/1.111396",
      "volume": "64",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "5184",
      "DOI": "10.1143/JJAP.34.5184",
      "volume": "34",
      "year": "1995",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2210",
      "DOI": "10.1143/JJAP.35.2210",
      "volume": "35",
      "year": "1996",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "25",
      "DOI": "10.1016/0022-5088(79)90185-1",
      "volume": "64",
      "year": "1979",
      "journal-title": "J. Less-Common. Met."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1596",
      "DOI": "10.1063/1.347255",
      "volume": "69",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "7672",
      "DOI": "10.1063/1.362341",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "year": "1992",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "586",
      "DOI": "10.1021/ac60353a050",
      "volume": "47",
      "year": "1975",
      "journal-title": "Anal. Chem."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "12903",
      "DOI": "10.1103/PhysRevB.39.12903",
      "volume": "39",
      "year": "1989",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "298",
      "DOI": "10.1039/f19757100298",
      "volume": "71",
      "year": "1975",
      "journal-title": "J. Chem. Soc. Faraday Trans. 1"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3457",
      "DOI": "10.1143/JJAP.37.3457",
      "volume": "37",
      "year": "1998",
      "journal-title": "Jpn. J. Appl. Phys."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.37.4482",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.37.4482/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.37.4482/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.37.4482/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        14
      ]
    ],
    "date-time": "2022-12-14T17:15:16Z",
    "timestamp": 1671038116000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.37.4482"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        8,
        1
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "8R",
    "published-print": {
      "date-parts": [
        [
          1998,
          8,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.37.4482",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1998,
        8,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films   by Reactive Sputtering and Their Characterization",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1998 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1997-12-27",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1998-06-08",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}