DOI: 10.1143/jjap.36.l1541. Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces

Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces

10.1143/jjap.36.l1541

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Quasibound states of a nontriangular quantum well in the silicon subsurface layer induced by an intense surface electric field are directly calculated on the basis of generalized Airy functions to obtain the field emission current from the silicon surface. The subband energy level and the resonance width of the quasibound state can be simultaneously derived from the complex eigenenergy of the system. By comparing the results for the nontriangular quantum well to those for the triangular quantum well with a finite depth obtained using the Blatt-Weisskopf approximation, it is shown that the triangular quantum well model is not valid under intense surface electric fields.

Bibliography

Khairurrijal, K., Seiichi Miyazaki, S. M., & Masataka Hirose, M. H. (1997). Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces. Japanese Journal of Applied Physics, 36(11B), L1541.

Authors 3

Khairurrijal Khairurrijal (first)
Seiichi Miyazaki Seiichi Miyazaki (additional)
Masataka Hirose Masataka Hirose (additional)

References 17 Referenced 5

10.1109/5.293159 / Proc. IEEE (1994)
10.1109/16.88515 / IEEE Trans. Electron Devices (1991)
10.1116/1.586872 / J. Vac. Sci. & Technol. B (1993)
10.1116/1.586850 / J. Vac. Sci. & Technol. B (1993)
10.1116/1.586684 / J. Vac. Sci. & Technol. B (1993)
10.1016/0169-4332(95)00188-3 / Appl. Surf. Sci. (1996)
10.1116/1.588958 / J. Vac. Sci. & Technol. B (1996)
10.1063/1.360366 / J. Appl. Phys. (1995)
10.1007/978-1-4612-9959-2 (1979)
10.1109/JQE.1986.1073186 / IEEE J. Quantum Electron. (1986)
{'journal-title': 'Jpn. J. Appl. Phys.', 'key': ''} / Jpn. J. Appl. Phys.
{'year': '1981', 'key': ''} (1981)
10.1103/PhysRevB.34.9034 / Phys. Rev. B (1986)
10.1103/PhysRevB.43.12042 / Phys. Rev. B (1991)
10.1103/PhysRevB.5.4891 / Phys. Rev. B (1972)
10.1016/0039-6028(88)90518-3 / Surf. Sci. (1988)
10.1002/pssb.2220470105 / Phys. Status Solidi (b) (1971)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 6:25 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:23 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:33 a.m.)
Issued	27 years, 10 months ago (Nov. 1, 1997)
Published	27 years, 10 months ago (Nov. 1, 1997)
Published Print	27 years, 10 months ago (Nov. 1, 1997)

Funders 0

None

BibTeX

@article{Khairurrijal_1997, title={Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.l1541}, DOI={10.1143/jjap.36.l1541}, number={11B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Khairurrijal, Khairurrijal and Seiichi Miyazaki, Seiichi Miyazaki and Masataka Hirose, Masataka Hirose}, year={1997}, month=nov, pages={L1541} }

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