DOI: 10.1143/jjap.36.l1257. Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process

Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process

10.1143/jjap.36.l1257

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

An atomic force microscope (AFM)-based anodic oxidation technique, which is based on selective oxidation of metal thin film by anodization, was developed for the fabrication of niobium (Nb)/Nb oxide-based ultra-small tunnel junction devices. Double junction devices without any gate structures and double junction SETs with side-gate structure were fabricated using this technique, and single-electron charging effects were clearly observed at 100 K.

Bibliography

Shirakashi, J., Matsumoto, K., Miura, N., & Konagai, M. (1997). Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process. Japanese Journal of Applied Physics, 36(9A), L1257.

Authors 4

Jun-ichi Shirakashi (first)
Kazuhiko Matsumoto (additional)
Naruhisa Miura (additional)
Makoto Konagai (additional)

References 17 Referenced 21

10.1143/JJAP.32.L553 / Jpn. J. Appl. Phys. (1993)
10.1116/1.587208 / J. Vac. Sci. & Technol. B (1994)
10.1126/science.270.5242.1639 / Science (1995)
10.1126/science.270.5242.1625 / Science (1995)
10.1063/1.114402 / Appl. Phys. Lett. (1995)
10.1063/1.117946 / Appl. Phys. Lett. (1996)
{'volume': '35', 'first-page': 'L1524', 'year': '1996', 'key': ''} (1996)
10.1143/JJAP.36.L1120 / Jpn. J. Appl. Phys. (1997)
10.1116/1.587430 / J. Vac. Sci. & Technol. B (1994)
10.1109/TMAG.1981.1060896 / IEEE Trans. Magn. (1981)
10.1109/TMAG.1981.1060968 / IEEE Trans. Magn. (1981)
10.1103/PhysRevB.37.98 / Phys. Rev. B (1988)
10.1016/0921-4526(91)90083-Q / Physica B (1991)
10.1103/PhysRevB.49.11508 / Phys. Rev. B (1994)
{'year': '1981', 'key': ''} (1981)
10.1063/1.115661 / Appl. Phys. Lett. (1996)
10.1143/JJAP.35.L1465 / Jpn. J. Appl. Phys. (1996)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 6:25 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:43 a.m.)
Indexed	3 weeks, 4 days ago (Aug. 7, 2025, 4:40 p.m.)
Issued	28 years ago (Sept. 1, 1997)
Published	28 years ago (Sept. 1, 1997)
Published Print	28 years ago (Sept. 1, 1997)

Funders 0

None

BibTeX

@article{Shirakashi_1997, title={Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.l1257}, DOI={10.1143/jjap.36.l1257}, number={9A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Shirakashi, Jun-ichi and Matsumoto, Kazuhiko and Miura, Naruhisa and Konagai, Makoto}, year={1997}, month=sep, pages={L1257} }

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