DOI: 10.1143/jjap.36.l1217. High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

10.1143/jjap.36.l1217

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool. The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.

Bibliography

Bender, H., Vanhellemont, J., & Schmolke, R. (1997). High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon. Japanese Journal of Applied Physics, 36(9A), L1217.

Authors 3

Hugo Bender (first)
Jan Vanhellemont (additional)
Rüdiger Schmolke (additional)

References 14 Referenced 25

10.1143/JJAP.29.L1947 / Jpn. J. Appl. Phys. (1990)
10.1088/0268-1242/7/1A/025 / Semicond. Sci. Technol. (1992)
{'year': '1990', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB3'} (1990)
10.1063/1.360603 / J. Appl. Phys. (1995)
10.1143/JJAP.35.812 / Jpn. J. Appl. Phys. (1996)
{'year': '1996', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB6'} (1996)
{'year': '1997', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB7'} (1997)
{'year': '1996', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB8'} (1996)
10.1063/1.118543 / Appl. Phys. Lett. (1997)
{'journal-title': 'Proc. Microscopy of Semiconducting Materials X, Oxford, 1997, eds. A. G. Cullis and J. L. Hutchison (1997) Inst. Phys. Conf. Ser.', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB10'} / Proc. Microscopy of Semiconducting Materials X, Oxford, 1997, eds. A. G. Cullis and J. L. Hutchison (1997) Inst. Phys. Conf. Ser.
{'year': '1997', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB11'} (1997)
{'year': '1997', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB12'} (1997)
{'journal-title': 'Proc. Microscopy of Semiconducting Materials X, Oxford, 1997, eds. A. G. Cullis and J. L. Hutchison, Inst. Phys. Conf. Ser. (1997).', 'key': 'crKey-10.1143/JJAP.36.L1217-BIB13'} / Proc. Microscopy of Semiconducting Materials X, Oxford, 1997, eds. A. G. Cullis and J. L. Hutchison, Inst. Phys. Conf. Ser. (1997).
10.1002/pssa.2210860126 / Phys. Status Solidi a (1984)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:25 p.m.)
Deposited	2 years, 3 months ago (April 23, 2023, 1:04 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:33 a.m.)
Issued	27 years, 11 months ago (Sept. 1, 1997)
Published	27 years, 11 months ago (Sept. 1, 1997)
Published Print	27 years, 11 months ago (Sept. 1, 1997)

Funders 0

None

BibTeX

@article{Bender_1997, title={High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.l1217}, DOI={10.1143/jjap.36.l1217}, number={9A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Bender, Hugo and Vanhellemont, Jan and Schmolke, Rüdiger}, year={1997}, month=sep, pages={L1217} }

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