Abstract
Heteroepitaxial Ba0.6Sr0.4TiO3 thin films with thicknesses from 26 nm to 97 nm were grown on SrRuO3 bottom electrode films on SrTiO3 single crystal substrates. Although the films have a paraelectric composition, ferroelectric hysteresis was observed in displacement versus electric field (D–E) loops. The ferroelectricity is considered to be developed as a result of bi-axial stress, caused by lattice mismatch between the dielectric films and the bottom electrodes. The maximum difference in the displacement was over 0.4 C/m2, even when the thickness of the film was reduced to 26 nm. The hysteresis loops showed an asymmetric characteristic at a polarity of applied voltage. The asymmetry was discussed in terms of an asymmetrical deformation of the crystal structure, which is probably introduced during the heteroepitaxial growth.
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Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Oct. 1, 2002, 4:51 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 14, 2022, 12:57 p.m.) |
Indexed | 6 months, 2 weeks ago (Feb. 21, 2025, 5:33 a.m.) |
Issued | 28 years ago (Sept. 1, 1997) |
Published | 28 years ago (Sept. 1, 1997) |
Published Print | 28 years ago (Sept. 1, 1997) |
@article{Abe_1997, title={Ferroelectric Properties in Heteroepitaxial Ba0.6Sr0.4TiO3 Thin Films on SrRuO3/SrTiO3 Substrates}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.5575}, DOI={10.1143/jjap.36.5575}, number={9R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Abe, Kazuhide and Komatsu, Shuichi and Yanase, Naoko and Kenya Sano, Kenya Sano and Takashi Kawakubo, Takashi Kawakubo}, year={1997}, month=sep, pages={5575} }