Abstract
An epitaxial microscopic capacitor array of Pb(Zr, Ti)O3/SrRuO3 with 0.5-to 2-µ m squares was fabricated by electron-beam lithography and Ar-ion etching on a SrTiO3(001) substrate. Atomic force microscopic observation revealed that line-and-spacing larger than 1 µ m assures adequate separation between capacitors. A thin barrier is formed on the terrace edge of the capacitors due to re-deposition of Ar-ion etched oxide.
References
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Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 1, 2002, 6:25 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 14, 2022, 12:56 p.m.) |
Indexed | 2 months, 2 weeks ago (June 6, 2025, 5:46 a.m.) |
Issued | 28 years ago (Aug. 1, 1997) |
Published | 28 years ago (Aug. 1, 1997) |
Published Print | 28 years ago (Aug. 1, 1997) |
@article{Hiratani_1997, title={Fabrication of Pb(Zr, Ti)O3 Microscopic Capacitors by Electron Beam Lithography}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.5219}, DOI={10.1143/jjap.36.5219}, number={8R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hiratani, Masahiko and Okazaki, Choichiro and Hasegawa, Haruhiro and Sugii, Nobuyuki and Tarutani, Yoshinobu and Takagi, Kazumasa}, year={1997}, month=aug, pages={5219} }