DOI: 10.1143/jjap.36.1428. A Study on the Fabrication of a Multigate/Multichannel Polysilicon Thin Film Transistor

A Study on the Fabrication of a Multigate/Multichannel Polysilicon Thin Film Transistor

10.1143/jjap.36.1428

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

In this study, the new polysilicon thin film transistors (TFTs) incorporating a multigate and a multichannel were fabricated and their electrical characteristics were estimated. An average field-effect mobility as high as 30 cm2/Vs was achieved for multigate/multichannel polysilicon TFTs. A subthreshold slope of 3 V/dec and a threshold voltage of 3 V were obtained. The switching ratio was about 105. Through the experimental results, it was found that multigate/multichannel TFTs can overcome the limitation of the multigate TFT whose on-current is smaller than that of a single-gate TFT with the same aspect ratio. Moreover, the bias-dependence of their off-current was not apparent even when the multichannel structure was employed. This is thought to be caused by the increase of the total channel resistance by the division of the channel. Compared with that of the conventional TFT employing the large gate width, the off-current flow in the new multigate/multichannel polysilicon TFT was greatly reduced without much loss of the on-current, in spite of the small total gate width.

Bibliography

Kim, J.-H. P. (1997). A Study on the Fabrication of a Multigate/Multichannel Polysilicon Thin Film Transistor. Japanese Journal of Applied Physics, 36(3S), 1428.

Authors 1

Jae-Hong Park Kim (first)

References 11 Referenced 7

10.1109/T-ED.1985.21939 / IEEE Trans. Electron Devices (1985)
10.1109/T-ED.1985.22212 / IEEE Trans. Electron Devices (1985)
10.1109/EDL.1987.26684 / IEEE Trans. Electron Device Lett. (1987)
10.1109/55.20401 / IEEE Trans. Electron Device Lett. (1988)
10.1109/16.127483 / IEEE Trans. Electron Devices (1992)
10.1109/16.65741 / IEEE Trans. Electron Devices (1991)
10.1143/JJAP.27.1937 / J. Appl. Phys. (1988)
10.1109/16.277383 / IEEE Trans. Electron Devices (1994)
10.1063/1.330583 / J. Appl. Phys. (1982)
10.1063/1.321593 / J. Appl. Phys. (1975)
{'key': '', 'first-page': '2349', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:46 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:44 p.m.)
Indexed	4 months, 3 weeks ago (April 12, 2025, 1:07 a.m.)
Issued	28 years, 6 months ago (March 1, 1997)
Published	28 years, 6 months ago (March 1, 1997)
Published Print	28 years, 6 months ago (March 1, 1997)

Funders 0

None

BibTeX

@article{Kim_1997, title={A Study on the Fabrication of a Multigate/Multichannel Polysilicon Thin Film Transistor}, volume={36}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.36.1428}, DOI={10.1143/jjap.36.1428}, number={3S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kim, Jae-Hong Park}, year={1997}, month=mar, pages={1428} }

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