DOI: 10.1143/jjap.35.l74. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

10.1143/jjap.35.l74

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

Bibliography

Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S. (1996). InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. Japanese Journal of Applied Physics, 35(1B), L74.

Authors 8

Shuji Nakamura (first)
Masayuki Senoh (additional)
Shin-ichi Nagahama (additional)
Naruhito Iwasa (additional)
Takao Yamada (additional)
Toshio Matsushita (additional)
Hiroyuki Kiyoku Hiroyuki Kiyoku (additional)
Yasunobu Sugimoto Yasunobu Sugimoto (additional)

References 17 Referenced 2,225

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Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:30 p.m.)
Indexed	1 week ago (Aug. 30, 2025, 1:16 p.m.)
Issued	29 years, 8 months ago (Jan. 1, 1996)
Published	29 years, 8 months ago (Jan. 1, 1996)
Published Print	29 years, 8 months ago (Jan. 1, 1996)

Funders 0

None

BibTeX

@article{Nakamura_1996, title={InGaN-Based Multi-Quantum-Well-Structure Laser Diodes}, volume={35}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.35.l74}, DOI={10.1143/jjap.35.l74}, number={1B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nakamura, Shuji and Senoh, Masayuki and Nagahama, Shin-ichi and Iwasa, Naruhito and Yamada, Takao and Matsushita, Toshio and Hiroyuki Kiyoku, Hiroyuki Kiyoku and Yasunobu Sugimoto, Yasunobu Sugimoto}, year={1996}, month=jan, pages={L74} }

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