DOI: 10.1143/jjap.35.4880. (Ba, Sr)TiO<sub>3</sub> Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes

(Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes

10.1143/jjap.35.4880

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Electrical properties of (Ba, Sr)TiO3 [BST] films have been investigated on RuO2/Ru and Ru electrodes instead of Pt, because they are easy to be etched. BST films were deposited at a substrate temperature of T s=420° C and a reactor pressure of P=1.5 Torr by employing a two-step liquid source chemical vapor deposition (CVD) process. BST films on RuO2/Ru were electrically shorted, which was considered to be caused by surface roughening during BST film deposition and/or post-annealing. In the case of Ru electrodes, an equivalent SiO2 thickness of t eq=0.50 nm (a dielectric constant of ε r=190), a leakage current of J L=4.6×10-8 A/cm2 at +1.1 V, and a dielectric loss of tan δ=0.018 were achieved at a total film thickness of 250 Å, by restricting Ru surface oxidation and its surface roughening. Moreover, BST film deposition on Ru storage nodes, 0.24 µ m wide, 0.6 µ m deep, 0.15 µ m high, and each spaced by 0.3–0.14 µ m, verified that the storage capacitance can be successfully increased by using sidewalls of the storage node, without a significant increase in the leakage current.

Bibliography

Kawahara, T., Yamamuka, M., Akimasa Yuuki, A. Y., & Kouichi Ono, K. O. (1996). (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes. Japanese Journal of Applied Physics, 35(9S), 4880.

Authors 4

Takaaki Kawahara (first)
Mikio Yamamuka (additional)
Akimasa Yuuki Akimasa Yuuki (additional)
Kouichi Ono Kouichi Ono (additional)

References 16 Referenced 65

{'year': '1995', 'key': ''} (1995)
{'year': '1995', 'key': ''} (1995)
{'year': '1995', 'key': ''} (1995)
{'year': '1995', 'key': ''} (1995)
10.1143/JJAP.35.2520 / Jpn. J. Appl. Phys. (1996)
10.1143/JJAP.33.5129 / Jpn. J. Appl. Phys. (1994)
10.1143/JJAP.34.5077 / Jpn. J. Appl. Phys. (1995)
{'key': ''}
10.1143/JJAP.33.5167 / Jpn. J. Appl. Phys. (1994)
10.1557/JMR.1992.3260 / J. Mater. Res. (1992)
10.1080/00150199408017601 / Ferroelectrics (1994)
{'key': '', 'first-page': '2975', 'volume': '9', 'year': '1994', 'journal-title': 'J. Mater. Res.'} / J. Mater. Res. (1994)
10.1063/1.113558 / Appl. Phys. Lett. (1995)
10.1063/1.111396 / Appl. Phys. Lett. (1994)
{'key': ''}
10.1143/JJAP.35.2530 / Jpn. J. Appl. Phys. (1996)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 5:03 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 1:14 p.m.)
Indexed	2 months, 4 weeks ago (June 6, 2025, 6:06 a.m.)
Issued	29 years ago (Sept. 1, 1996)
Published	29 years ago (Sept. 1, 1996)
Published Print	29 years ago (Sept. 1, 1996)

Funders 0

None

BibTeX

@article{Kawahara_1996, title={(Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes}, volume={35}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.35.4880}, DOI={10.1143/jjap.35.4880}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kawahara, Takaaki and Yamamuka, Mikio and Akimasa Yuuki, Akimasa Yuuki and Kouichi Ono, Kouichi Ono}, year={1996}, month=sep, pages={4880} }

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