DOI: 10.1143/jjap.34.l903. Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides

Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides

10.1143/jjap.34.l903

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The tunneling current through ultrathin (3.0-6.0 nm) gate oxides has been measured as a function of the voltage across SiO2, V OX, and compared with results of existing theories utilizing the WKB approximation. The electron effective mass in the Fowler-Nordheim tunneling region (V OX≥3.25 V) is obtained to be (0.34±0.04)m 0 and that in the direct tunneling region (V OX<3.25 V) is (0.29±0.02)m 0. It is also shown that the charge-to-breakdown for electron injection from n+poly-Si gates is not significantly degraded by decreasing the oxide thickness and is even dramatically improved for the case of a 3.0 nm-thick gate oxide.

Bibliography

Yoshida, T., Imafuku, D., Alay, J. L., Miyazaki, S., & Masataka Hirose, M. H. (1995). Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides. Japanese Journal of Applied Physics, 34(7B), L903.

Authors 5

Takeshi Yoshida (first)
Daisuke Imafuku (additional)
Josep Lluis Alay (additional)
Seiichi Miyazaki (additional)
Masataka Hirose Masataka Hirose (additional)

References 11 Referenced 48

10.1557/PROC-259-349 / Mater. Res. Soc. Symp. Proc. (1992)
10.1143/JJAP.32.294 / Jpn. J. Appl. Phys. (1993)
{'year': '1993', 'key': ''} (1993)
{'year': '1994', 'key': ''} (1994)
10.1143/JJAP.34.722 / Jpn. J. Appl. Phys. (1995)
10.1063/1.1702682 / J. Appl. Phys. (1963)
{'year': '1988', 'key': ''} (1988)
10.1143/JJAP.34.L653 / Jpn. J. Appl. Phys. (1995)
{'key': ''}
10.1557/PROC-259-93 / Mater. Res. Soc. Symp. Proc. (1992)
10.1557/PROC-222-225 / Mater. Res. Soc. Symp. Proc. (1991)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:07 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:44 p.m.)
Indexed	4 months, 2 weeks ago (April 11, 2025, 12:56 a.m.)
Issued	30 years, 1 month ago (July 1, 1995)
Published	30 years, 1 month ago (July 1, 1995)
Published Print	30 years, 1 month ago (July 1, 1995)

Funders 0

None

BibTeX

@article{Yoshida_1995, title={Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides}, volume={34}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.34.l903}, DOI={10.1143/jjap.34.l903}, number={7B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yoshida, Takeshi and Imafuku, Daisuke and Alay, Josep Lluis and Miyazaki, Seiichi and Masataka Hirose, Masataka Hirose}, year={1995}, month=jul, pages={L903} }

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