DOI: 10.1143/jjap.34.3266. Heteroepitaxial TiN Film Growth on Si(111) by Low Energy Reactive Ion Beam Epitaxy

Heteroepitaxial TiN Film Growth on Si(111) by Low Energy Reactive Ion Beam Epitaxy

10.1143/jjap.34.3266

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Epitaxial TiN(111) films were grown on Si(111) substrates by low energy reactive ion beam deposition using N2 ion beam irradiation and Ti evaporation. TiN epitaxial film formation was investigated as a function of the substrate temperature (T s) and the kinetic energy of the ion beam (E b). Using X-ray diffraction (XRD) and in-situ reflection high-energy electron diffraction (RHEED), the epitaxial relationship was found to be TiN(111)|| Si(111), TiN<110>|| Si<110> above substrate temperature of 400° C. Cross-sectional bright-field transmission electron microscope (TEM) observation has shown that the interface is quite flat and sharp and that four TiN lattice spacings match three spacings of the Si lattice. A lowest resistivity value of 18 µΩ· cm (T s=600° C, E b=100 eV) was obtained.

Bibliography

Sano, K., Oose, M., & Takashi Kawakubo, T. K. (1995). Heteroepitaxial TiN Film Growth on Si(111) by Low Energy Reactive Ion Beam Epitaxy. Japanese Journal of Applied Physics, 34(6R), 3266.

Authors 3

Kenya Sano (first)
Michihiro Oose (additional)
Takashi Kawakubo Takashi Kawakubo (additional)

References 21 Referenced 19

10.1116/1.572850 / J. Vac. Sci. Technol. A (1985)
10.1116/1.572900 / J. Vac. Sci. Technol. A (1985)
10.1016/0040-6090(92)90692-5 / Thin Solid Films (1992)
10.1063/1.351915 / J. Appl. Phys. (1992)
10.1116/1.573255 / J. Vac. Sci. Technol. A (1985)
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10.1016/0168-583X(88)90651-9 / Nucl. Instrum. & Methods B (1988)
10.1016/0168-583X(89)90278-4 / Nucl. Instrum. & Methods B (1989)
10.1016/0168-583X(89)90763-5 / Nucl. Instrum. & Methods B (1989)
10.1063/1.107568 / Appl. Phys. Lett. (1992)
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Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 6:07 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:22 p.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:33 a.m.)
Issued	30 years, 3 months ago (June 1, 1995)
Published	30 years, 3 months ago (June 1, 1995)
Published Print	30 years, 3 months ago (June 1, 1995)

Funders 0

None

BibTeX

@article{Sano_1995, title={Heteroepitaxial TiN Film Growth on Si(111) by Low Energy Reactive Ion Beam Epitaxy}, volume={34}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.34.3266}, DOI={10.1143/jjap.34.3266}, number={6R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sano, Kenya and Oose, Michihiro and Takashi Kawakubo, Takashi Kawakubo}, year={1995}, month=jun, pages={3266} }

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