DOI: 10.1143/jjap.34.1075. NH<sub>3</sub>-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy

NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy

10.1143/jjap.34.1075

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

X-ray photoelectron spectroscopy with varying the photoelectron take-off angle reveals the surface-nitridation process of (100) GaAs by an rf NH3 plasma with a magnetic field. The plasma treatment for shorter time or at lower temperature leads to the formation of a Ga-As-N ternary-compound layer on the GaAs surface. Increasing the treatment time or treatment temperature changes the main part of the surface layer into GaN due to the desorption of As. The oxidation resistance is also examined, showing that this plasma-nitridation method is one of the promising technologies for the passivation of (100) CaAs surface.

Bibliography

Masuda, A., Yonezawa, Y., Morimoto, A., & Tatsuo Shimizu, T. S. (1995). NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics, 34(2S), 1075.

Authors 4

Atsushi Masuda (first)
Yasuto Yonezawa (additional)
Akiharu Morimoto (additional)
Tatsuo Shimizu Tatsuo Shimizu (additional)

References 19 Referenced 31

10.1143/JJAP.27.L1331 / Jpn. J. Appl. Phys. (1988)
10.1063/1.99563 / Appl. Phys. Lett. (1988)
10.1143/JJAP.27.L2367 / Jpn. J. Appl. Phys. (1988)
10.1143/JJAP.32.3354 / Jpn. J. Appl. Phys. (1993)
10.1063/1.98877 / Appl. Phys. Lett. (1987)
10.1063/1.345555 / J. Appl. Phys. (1990)
10.1116/1.578759 / J. Vac. Sci. & Technol. A (1993)
10.1149/1.2123979 / J. Electrochem. Soc. (1982)
{'year': '1990', 'key': ''} (1990)
{'year': '1990', 'key': ''} (1990)
10.1063/1.337208 / J. Appl. Phys. (1986)
10.1116/1.586703 / J. Vac. Sci. & Technol. B (1993)
10.1116/1.577762 / J. Vac. Sci. & Technol. A (1992)
10.1116/1.578314 / J. Vac. Sci. & Technol. A (1993)
10.1116/1.586808 / J. Vac. Sci. & Technol. B (1993)
10.1063/1.106547 / Appl. Phys. Lett. (1992)
10.1063/1.110250 / Appl. Phys. Lett. (1993)
10.1143/JJAP.29.L864 / Jpn. J. Appl. Phys. (1990)
10.1143/JJAP.32.2794 / Jpn. J. Appl. Phys. (1993)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 6:07 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:43 p.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:32 a.m.)
Issued	30 years, 7 months ago (Feb. 1, 1995)
Published	30 years, 7 months ago (Feb. 1, 1995)
Published Print	30 years, 7 months ago (Feb. 1, 1995)

Funders 0

None

BibTeX

@article{Masuda_1995, title={NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy}, volume={34}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.34.1075}, DOI={10.1143/jjap.34.1075}, number={2S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Masuda, Atsushi and Yonezawa, Yasuto and Morimoto, Akiharu and Tatsuo Shimizu, Tatsuo Shimizu}, year={1995}, month=feb, pages={1075} }

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