DOI: 10.1143/jjap.33.l675. Periodic Changes in SiO<sub>2</sub>/Si(111) Interface Structures with Progress of Thermal Oxidation

Periodic Changes in SiO2/Si(111) Interface Structures with Progress of Thermal Oxidation

10.1143/jjap.33.l675

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

Bibliography

Kazuaki Ohishi, K. O., & Takeo Hattori, T. H. (1994). Periodic Changes in SiO2/Si(111) Interface Structures with Progress of Thermal Oxidation. Japanese Journal of Applied Physics, 33(5A), L675.

Authors 2

Kazuaki Ohishi Kazuaki Ohishi (first)
Takeo Hattori Takeo Hattori (additional)

References 21 Referenced 144

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Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:12 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:25 p.m.)
Indexed	5 months ago (March 31, 2025, 12:19 a.m.)
Issued	31 years, 3 months ago (May 1, 1994)
Published	31 years, 3 months ago (May 1, 1994)
Published Print	31 years, 3 months ago (May 1, 1994)

Funders 0

None

BibTeX

@article{Kazuaki_Ohishi_1994, title={Periodic Changes in SiO2/Si(111) Interface Structures with Progress of Thermal Oxidation}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.l675}, DOI={10.1143/jjap.33.l675}, number={5A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kazuaki Ohishi, Kazuaki Ohishi and Takeo Hattori, Takeo Hattori}, year={1994}, month=may, pages={L675} }

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