Abstract
A scanning tunneling microscope (STM) operated under ultrahigh vacuum enabled us to eliminate individual formate anions ( DCOO-) adsorbed on a TiO2(110) surface. When bias voltages of +3.7 V or more were applied on the sample, the formate anions were removed under the STM tip. In contrast, much higher voltages, +5.0 V or more, were required to damage the underlying TiO2 surface. Thus we could strip off the formate anions in a desired area without damage to the substrate, to create patchworks of uncovered substrate in the monolayer of adsorbed formate anions. The threshold bias voltage for the elimination showed a small dependence on tunneling current, suggesting that the removal process is through field evaporation rather than direct excitation or thermal activation by tunneling electrons.
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(1983)
Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 1, 2002, 4:18 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 7, 2022, 12:30 p.m.) |
Indexed | 6 months ago (Feb. 21, 2025, 5:32 a.m.) |
Issued | 30 years, 11 months ago (Sept. 1, 1994) |
Published | 30 years, 11 months ago (Sept. 1, 1994) |
Published Print | 30 years, 11 months ago (Sept. 1, 1994) |
@article{Hiroshi_Onishi_1994, title={Removal of Adsorbed Organic Molecules with Scanning Tunneling Microscope: Formate Anions on TiO2(110) Surface}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.l1338}, DOI={10.1143/jjap.33.l1338}, number={9B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hiroshi Onishi, Hiroshi Onishi and Yasuhiro Iwasawa, Yasuhiro Iwasawa}, year={1994}, month=sep, pages={L1338} }