DOI: 10.1143/jjap.33.790. A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications

A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications

10.1143/jjap.33.790

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

This paper describes our research on quantum memory devices having a single transistor structure similar to that of a double-emitter resonant-tunneling hot electron transistor (RHET). Its prototype 2×2 bit cell array was fabricated and operated at room temperature. The device used in the prototype cell had no current gain, however, and required other active devices to build static random access memory (SRAM) peripheral circuits such as a decoder and senseamplifier. We also report recent advances in the memory cell made using a double-emitter RHET which has a current gain of 8 at 77 K–suitable for logic circuits peripheral to our memory cell array. The cell's small size shows promise for use in large scale memory application.

Bibliography

Mori, T., Muto, S., Hirotaka Tamura, H. T., & Naoki Yokoyama, N. Y. (1994). A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications. Japanese Journal of Applied Physics, 33(1S), 790.

Authors 4

Toshihiko Mori (first)
Shunichi Muto (additional)
Hirotaka Tamura Hirotaka Tamura (additional)
Naoki Yokoyama Naoki Yokoyama (additional)

References 12 Referenced 20

10.1143/JJAP.24.L852 / Jpn. J. Appl. Phys. (1985)
10.1109/4.156447 / IEEE J. Solid-State Circuit (1992)
10.1109/EDL.1987.26637 / IEEE Electron Device Lett. (1987)
10.1109/T-ED.1987.23215 / IEEE Trans. Electron Devices (1987)
10.1109/55.689 / IEEE Electron Device Lett. (1988)
10.1109/4.127345 / IEEE J. Solid-State Circuit (1992)
10.1109/55.192801 / IEEE Electron Device Lett. (1992)
{'year': '1992', 'key': ''} (1992)
{'year': '1992', 'key': ''} (1992)
10.1143/JJAP.26.L1332 / Jpn. J. Appl. Phys. (1987)
{'year': '1984', 'key': ''} (1984)
{'year': '1991', 'key': ''} (1991)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:12 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:58 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:34 a.m.)
Issued	31 years, 7 months ago (Jan. 1, 1994)
Published	31 years, 7 months ago (Jan. 1, 1994)
Published Print	31 years, 7 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{Mori_1994, title={A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.790}, DOI={10.1143/jjap.33.790}, number={1S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Mori, Toshihiko and Muto, Shunichi and Hirotaka Tamura, Hirotaka Tamura and Naoki Yokoyama, Naoki Yokoyama}, year={1994}, month=jan, pages={790} }

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