DOI: 10.1143/jjap.33.688. Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

10.1143/jjap.33.688

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The initial substrate nitridation effects on the crystal structure of GaN epitaxial layers grown on GaAs substrates by gas source molecular beam epitaxy using RF-radical N2 as a nitrogen source were investigated. The crystal structure of GaN grown on (100) GaAs substrates was critically influenced by substrate nitridation time, that is, zincblende GaN was grown on the substrate without nitridation, and wurtzite GaN was grown on the nitrided substrate (longer than 120 s). The substrate misorientation effects on surface morphology and X-ray full width at half-maximum of zincblende GaN layers were also studied. A featureless smooth surface was obtained for a layer grown under the high V/III beam flux ratio condition.

Authors 3

Akihiko Kikuchi (first)
Hiroyuki Hoshi Hiroyuki Hoshi (additional)
Katsumi Kishino Katsumi Kishino (additional)

References 20 Referenced 72

10.1116/1.585897 / J. Vac. Sci. & Technol. B (1992)
10.1063/1.96549 / Appl. Phys. Lett. (1986)
10.1143/JJAP.30.L1705 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.28.L2112 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.31.L139 / Jpn. J. Appl. Phys. (1992)
10.1143/JJAP.30.L1998 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.25.L945 / Jpn. J. Appl. Phys. (1986)
10.1063/1.106344 / Appl. Phys. Lett. (1991)
{'key': ''}
10.1116/1.585381 / J. Vac. Sci. & Technol. B (1991)
10.1063/1.106309 / Appl. Phys. Lett. (1991)
10.1116/1.575869 / J. Vac. Sci. & Technol. A (1989)
10.1143/JJAP.30.L1665 / Jpn. J. Appl. Phys. (1991)
{'key': ''}
10.1016/0022-0248(92)90373-Q / J. Cryst. Growth (1992)
10.1016/0022-0248(91)91125-T / J. Cryst. Growth (1991)
10.1063/1.109026 / Appl. Phys. Lett. (1993)
10.1049/el:19890512 / Electron. Lett. (1989)
10.1109/3.89967 / IEEE J. Quantum Electron. (1991)
10.1016/0022-0248(93)90567-G / J. Cryst. Growth (1993)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:12 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 12:57 p.m.)
Indexed	2 months, 1 week ago (June 24, 2025, 7:28 a.m.)
Issued	31 years, 8 months ago (Jan. 1, 1994)
Published	31 years, 8 months ago (Jan. 1, 1994)
Published Print	31 years, 8 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{Kikuchi_1994, title={Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.688}, DOI={10.1143/jjap.33.688}, number={1S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kikuchi, Akihiko and Hiroyuki Hoshi, Hiroyuki Hoshi and Katsumi Kishino, Katsumi Kishino}, year={1994}, month=jan, pages={688} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        24
      ]
    ],
    "date-time": "2025-06-24T11:28:26Z",
    "timestamp": 1750764506908,
    "version": "3.37.3"
  },
  "reference-count": 20,
  "publisher": "IOP Publishing",
  "issue": "1S",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1994,
            1,
            1
          ]
        ],
        "date-time": "1994-01-01T00:00:00Z",
        "timestamp": 757382400000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1994,
            1,
            1
          ]
        ],
        "date-time": "1994-01-01T00:00:00Z",
        "timestamp": 757382400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1994,
        1,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n   The initial substrate nitridation effects on the crystal structure of GaN epitaxial layers grown on GaAs   substrates by gas source molecular beam epitaxy using RF-radical  N<jats:sub>2</jats:sub> as a nitrogen source were investigated. The   crystal structure of GaN grown on (100) GaAs substrates was critically influenced by substrate nitridation time,   that is, zincblende GaN was grown on the substrate without nitridation, and wurtzite GaN was grown on the   nitrided substrate (longer than 120 s). The substrate misorientation effects on surface morphology and X-ray full width   at half-maximum of zincblende GaN layers were also studied. A featureless smooth surface was obtained for a   layer grown under the high V/III beam flux ratio condition. \n   </jats:p>",
  "DOI": "10.1143/jjap.33.688",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        1
      ]
    ],
    "date-time": "2002-10-01T20:12:06Z",
    "timestamp": 1033503126000
  },
  "page": "688",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 72,
  "title": "Substrate Nitridation Effects on GaN Grown on GaAs Substrates   by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source",
  "prefix": "10.35848",
  "volume": "33",
  "author": [
    {
      "given": "Akihiko",
      "family": "Kikuchi",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Hiroyuki Hoshi",
      "family": "Hiroyuki Hoshi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Katsumi Kishino",
      "family": "Katsumi Kishino",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1237",
      "DOI": "10.1116/1.585897",
      "volume": "10",
      "year": "1992",
      "journal-title": "J. Vac. Sci. & Technol. B"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "353",
      "DOI": "10.1063/1.96549",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1705",
      "DOI": "10.1143/JJAP.30.L1705",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L2112",
      "DOI": "10.1143/JJAP.28.L2112",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L139",
      "DOI": "10.1143/JJAP.31.L139",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1998",
      "DOI": "10.1143/JJAP.30.L1998",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L945",
      "DOI": "10.1143/JJAP.25.L945",
      "volume": "25",
      "year": "1986",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1058",
      "DOI": "10.1063/1.106344",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1924",
      "DOI": "10.1116/1.585381",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. & Technol. B"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "944",
      "DOI": "10.1063/1.106309",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "701",
      "DOI": "10.1116/1.575869",
      "volume": "7",
      "year": "1989",
      "journal-title": "J. Vac. Sci. & Technol. A"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1665",
      "DOI": "10.1143/JJAP.30.L1665",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "114",
      "DOI": "10.1016/0022-0248(92)90373-Q",
      "volume": "120",
      "year": "1992",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1024",
      "DOI": "10.1016/0022-0248(91)91125-T",
      "volume": "111",
      "year": "1991",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3479",
      "DOI": "10.1063/1.109026",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "758",
      "DOI": "10.1049/el:19890512",
      "volume": "25",
      "year": "1989",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1483",
      "DOI": "10.1109/3.89967",
      "volume": "27",
      "year": "1991",
      "journal-title": "IEEE J. Quantum Electron."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "9",
      "DOI": "10.1016/0022-0248(93)90567-G",
      "volume": "127",
      "year": "1993",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.33.688",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.33.688/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.33.688/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.33.688/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        7
      ]
    ],
    "date-time": "2022-12-07T17:57:49Z",
    "timestamp": 1670435869000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.33.688"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1994,
        1,
        1
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "1S",
    "published-print": {
      "date-parts": [
        [
          1994,
          1,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.33.688",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1994,
        1,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Substrate Nitridation Effects on GaN Grown on GaAs Substrates   by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1994 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1993-09-17",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1993-11-20",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}