Abstract
Electrical and photoelectrical properties of nondoped and doped zinc oxide films coated on glass plates by the dip-coating method are investigated at room temperature in various ambient atmospheres. The dark conductivity of the nondoped films exponentially decreased with decreasing film thickness while the conductivity under illumination of 350 nm light was almost constant at 100 S·cm-1 irrespective of the film thickness. Consequently thinner films showed larger photoresponse than thicker films. This thickness dependence is explained by the variation of ZnO particle size with the film thickness (fine particle model) and the additional effect of the Schottky barrier generated between the film and gold electrodes.
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Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Oct. 1, 2002, 4:18 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 7, 2022, 12:53 p.m.) |
Indexed | 1 month, 3 weeks ago (July 12, 2025, 6:49 p.m.) |
Issued | 30 years, 9 months ago (Dec. 1, 1994) |
Published | 30 years, 9 months ago (Dec. 1, 1994) |
Published Print | 30 years, 9 months ago (Dec. 1, 1994) |
@article{Takahashi_1994, title={Photoconductivity of Ultrathin Zinc Oxide Films}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.6611}, DOI={10.1143/jjap.33.6611}, number={12R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Takahashi, Yasutaka and Kanamori, Masaaki and Kondoh, Akiko and Hideki Minoura, Hideki Minoura and Yutaka Ohya, Yutaka Ohya}, year={1994}, month=dec, pages={6611} }