DOI: 10.1143/jjap.33.5129. Step Coverage and Electrical Properties of (Ba, Sr)TiO<sub>3</sub> Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)<sub>2</sub>

Step Coverage and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)2

10.1143/jjap.33.5129

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Thin films of (Ba, Sr)TiO3 (BST) with high dielectric constant were prepared on Pt/ SiO2/Si substrates of 6-inch-diameter by liquid source chemical vapor deposition using Ba(DPM)2, Sr(DPM)2 and TiO(DPM)2 (DPM=dipivaloylmethanato; C11H19O2) dissolved in tetrahydrofuran (THF). The reproducibility of ±3 % for the film composition was achieved by optimizing the deposition procedures. It was found that the coverage of 72%, obtained at the substrate temperature T s=753 K, was better than those obtained using other Ti sources such as Ti(O-i-Pr)4 (TTIP) and Ti(O-i-Pr)2(DPM)2. The electrical properties of the 480-Å-thick BST film, deposited at T s=753 K using TiO(DPM)2, were as follows: dielectric constant ε=230, equivalent SiO2 thickness t eq=7.8 Å, leakage current density J L=6.7×10-6 A/cm2 at 1.65 V and dielectric loss tan δ=0.013.

Bibliography

Kawahara, T., Yamamuka, M., Makita, T., Naka, J., Yuuki, A., Noboru Mikami, N. M., & Kouichi Ono, K. O. (1994). Step Coverage and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)2. Japanese Journal of Applied Physics, 33(9S), 5129.

Authors 7

Takaaki Kawahara (first)
Mikio Yamamuka (additional)
Tetsuro Makita (additional)
Jiro Naka (additional)
Akimasa Yuuki (additional)
Noboru Mikami Noboru Mikami (additional)
Kouichi Ono Kouichi Ono (additional)

References 16 Referenced 72

{'year': '1991', 'key': ''} (1991)
10.1557/PROC-310-255 / Mater. Res. Soc. Symp. Proc. (1993)
10.1143/JJAP.32.4082 / Jpn. J. Appl. Phys. (1993)
10.1143/JJAP.31.3025 / Jpn. J. Appl. Phys. (1992)
10.1143/JJAP.30.2193 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.32.4069 / Jpn. J. Appl. Phys. (1993)
10.1143/JJAP.32.4126 / Jpn. J. Appl. Phys. (1993)
10.1557/PROC-284-529 / Mater. Res. Soc. Symp. Proc. (1992)
{'key': ''}
{'year': '1992', 'key': ''} (1992)
{'key': ''}
10.1143/JJAP.29.L947 / Jpn. J. Appl. Phys. (1990)
{'journal-title': 'Jpn. J. Appl. Phys.', 'key': ''} / Jpn. J. Appl. Phys.
10.1557/PROC-310-487 / Mater. Res. Soc. Symp. Proc. (1993)
10.1143/JJAP.29.1932 / Jpn. J. Appl. Phys. (1990)
{'key': '', 'first-page': '48', 'volume': '35', 'year': '1984', 'journal-title': 'Kinzoku Hyomen Gijutsu'} / Kinzoku Hyomen Gijutsu (1984)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:18 p.m.)
Deposited	2 years, 8 months ago (Dec. 7, 2022, 1:13 p.m.)
Indexed	1 month ago (July 27, 2025, 3:13 a.m.)
Issued	30 years, 11 months ago (Sept. 1, 1994)
Published	30 years, 11 months ago (Sept. 1, 1994)
Published Print	30 years, 11 months ago (Sept. 1, 1994)

Funders 0

None

BibTeX

@article{Kawahara_1994, title={Step Coverage and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)2}, volume={33}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.33.5129}, DOI={10.1143/jjap.33.5129}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kawahara, Takaaki and Yamamuka, Mikio and Makita, Tetsuro and Naka, Jiro and Yuuki, Akimasa and Noboru Mikami, Noboru Mikami and Kouichi Ono, Kouichi Ono}, year={1994}, month=sep, pages={5129} }

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  "abstract": "<jats:p> \n   Thin films of  (Ba, Sr)TiO<jats:sub>3</jats:sub> (BST) with high dielectric constant were prepared on   Pt/ SiO<jats:sub>2</jats:sub>/Si substrates of 6-inch-diameter by liquid source chemical vapor deposition   using  Ba(DPM)<jats:sub>2</jats:sub>,  Sr(DPM)<jats:sub>2</jats:sub> and  TiO(DPM)<jats:sub>2</jats:sub> (DPM=dipivaloylmethanato;    C<jats:sub>11</jats:sub>H<jats:sub>19</jats:sub>O<jats:sub>2</jats:sub>) dissolved in tetrahydrofuran (THF). The reproducibility of \u00b13 %   for the film composition was achieved by optimizing the deposition procedures. It was found   that the coverage of 72%, obtained at the substrate temperature <jats:italic>T</jats:italic>\n                  <jats:sub> s</jats:sub>=753  K,   was better than those obtained using other Ti sources such as  Ti(O-i-Pr)<jats:sub>4</jats:sub>   (TTIP) and  Ti(O-i-Pr)<jats:sub>2</jats:sub>(DPM)<jats:sub>2</jats:sub>. The electrical properties of the   480-\u00c5-thick BST film, deposited at <jats:italic>T</jats:italic>\n                  <jats:sub> s</jats:sub>=753  K using  TiO(DPM)<jats:sub>2</jats:sub>,   were as follows: dielectric constant <jats:italic>\u03b5</jats:italic>=230, equivalent  SiO<jats:sub>2</jats:sub> thickness   <jats:italic>t</jats:italic>\n                  <jats:sub> eq</jats:sub>=7.8  \u00c5, leakage current density <jats:italic>J</jats:italic>\n                  <jats:sub> L</jats:sub>=6.7\u00d710<jats:sup>-6</jats:sup>  A/cm<jats:sup>2</jats:sup>   at 1.65 V and dielectric loss tan \n    \u03b4=0.013. \n   </jats:p>",
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