DOI: 10.1143/jjap.32.l8. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

10.1143/jjap.32.l8

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.

Bibliography

Nakamura, S., Masayuki Senoh, M. S., & Takashi Mukai, T. M. (1993). P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 32(1A), L8.

Authors 3

Shuji Nakamura (first)
Masayuki Senoh Masayuki Senoh (additional)
Takashi Mukai Takashi Mukai (additional)

References 16 Referenced 492

10.1063/1.105472 / Appl. Phys. Lett. (1991)
10.1063/1.107109 / Appl. Phys. Lett. (1992)
10.1063/1.107123 / Appl. Phys. Lett. (1992)
10.1063/1.96549 / Appl. Phys. Lett. (1986)
10.1016/0022-0248(89)90200-5 / J. Cryst. Growth (1989)
{'key': '', 'first-page': '725', 'volume': '106', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1989)
10.1143/JJAP.28.L2112 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.30.L1708 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.30.L1998 / Jpn. J. Appl. Phys. (1991)
{'key': '', 'first-page': '141', 'volume': '106', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1989)
10.1143/JJAP.28.L1334 / Jpn. J. Appl. Phys. (1989)
10.1063/1.106086 / Appl. Phys. Lett. (1991)
10.1143/JJAP.31.L1457 / Jpn. J. Appl. Phys. (1992)
10.1143/JJAP.30.1620 / Jpn. J. Appl. Phys. (1991)
10.1063/1.105239 / Appl. Phys. Lett. (1991)
10.1143/JJAP.31.1258 / Jpn. J. Appl. Phys. (1992)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:16 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 5:57 p.m.)
Indexed	36 minutes ago (Aug. 30, 2025, 4:53 a.m.)
Issued	32 years, 7 months ago (Jan. 1, 1993)
Published	32 years, 7 months ago (Jan. 1, 1993)
Published Print	32 years, 7 months ago (Jan. 1, 1993)

Funders 0

None

BibTeX

@article{Nakamura_1993, title={P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes}, volume={32}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.32.l8}, DOI={10.1143/jjap.32.l8}, number={1A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nakamura, Shuji and Masayuki Senoh, Masayuki Senoh and Takashi Mukai, Takashi Mukai}, year={1993}, month=jan, pages={L8} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        30
      ]
    ],
    "date-time": "2025-08-30T08:53:43Z",
    "timestamp": 1756544023122,
    "version": "3.37.3"
  },
  "reference-count": 16,
  "publisher": "IOP Publishing",
  "issue": "1A",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1993,
            1,
            1
          ]
        ],
        "date-time": "1993-01-01T00:00:00Z",
        "timestamp": 725846400000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1993,
            1,
            1
          ]
        ],
        "date-time": "1993-01-01T00:00:00Z",
        "timestamp": 725846400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        1,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n   P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 \u00b5W and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs. \n </jats:p>",
  "DOI": "10.1143/jjap.32.l8",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        2,
        23
      ]
    ],
    "date-time": "2005-02-23T02:16:21Z",
    "timestamp": 1109124981000
  },
  "page": "L8",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 492,
  "title": "P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes",
  "prefix": "10.35848",
  "volume": "32",
  "author": [
    {
      "given": "Shuji",
      "family": "Nakamura",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Masayuki Senoh",
      "family": "Masayuki Senoh",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Takashi Mukai",
      "family": "Takashi Mukai",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1272",
      "DOI": "10.1063/1.105472",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2045",
      "DOI": "10.1063/1.107109",
      "volume": "60",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1999",
      "DOI": "10.1063/1.107123",
      "volume": "60",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "353",
      "DOI": "10.1063/1.96549",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1016/0022-0248(89)90200-5",
      "volume": "98",
      "year": "1989",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "",
      "first-page": "725",
      "volume": "106",
      "year": "1989",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L2112",
      "DOI": "10.1143/JJAP.28.L2112",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1708",
      "DOI": "10.1143/JJAP.30.L1708",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1998",
      "DOI": "10.1143/JJAP.30.L1998",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "first-page": "141",
      "volume": "106",
      "year": "1989",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1334",
      "DOI": "10.1143/JJAP.28.L1334",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2251",
      "DOI": "10.1063/1.106086",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1457",
      "DOI": "10.1143/JJAP.31.L1457",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1620",
      "DOI": "10.1143/JJAP.30.1620",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2021",
      "DOI": "10.1063/1.105239",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1258",
      "DOI": "10.1143/JJAP.31.1258",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.L8",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.L8/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.L8/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.L8/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        6
      ]
    ],
    "date-time": "2022-12-06T22:57:06Z",
    "timestamp": 1670367426000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.L8"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        1,
        1
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "1A",
    "published-print": {
      "date-parts": [
        [
          1993,
          1,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.32.L8",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1993,
        1,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1993 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1992-09-03",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1992-10-27",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}