DOI: 10.1143/jjap.32.l434. Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface<sup>*</sup>

Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*

10.1143/jjap.32.l434

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Layered III-VI semiconductor GaSe has been heteroepitaxially grown on HF-treated Si(111) surfaces. The HF-treated Si surface is chemically inactive because of the hydrogen termination of active dangling bonds. GaSe can be grown on such a surface through weak van der Waals interaction, which relaxes the lattice matching requirement. With careful control of the substrate temperature, thermal desorption of surface hydrogen atoms was prevented so that a single-domain film of GaSe could be grown with good crystallinity. Auger electron spectra and high-resolution electron energy loss spectra revealed high quality of the grown GaSe film.

Bibliography

Liu, K.-Y., Ueno, K., Fujikawa, Y., Koichiro Saiki, K. S., & Atsushi Koma, A. K. (1993). Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*. Japanese Journal of Applied Physics, 32(3B), L434.

Authors 5

Kuang-Yu Liu (first)
Keiji Ueno (additional)
Yasunori Fujikawa (additional)
Koichiro Saiki Koichiro Saiki (additional)
Atsushi Koma Atsushi Koma (additional)

References 15 Referenced 46

10.1116/1.583125 / J. Vac. Sci. & Technol. (1985)
10.1016/0039-6028(86)90471-1 / Surf. Sci. (1986)
10.1116/1.576983 / J. Vac. Sci. & Technol. (1990)
10.1063/1.102817 / Appl. Phys. Lett. (1990)
10.1016/0022-0248(91)91126-U / J. Cryst. Growth (1991)
10.1143/JJAP.30.L1352 / Jpn. J. Appl. Phys. (1991)
10.1063/1.100053 / Appl. Phys. Lett. (1988)
10.1116/1.575980 / J. Vac. Sci. & Technol. (1989)
10.1063/1.105304 / Appl. Phys. Lett. (1991)
10.1063/1.102728 / Appl. Phys. Lett. (1990)
10.1103/PhysRevLett.65.1917 / Phys. Rev. Lett. (1990)
10.1063/1.105287 / Appl. Phys. Lett. (1991)
10.1143/JJAP.30.897 / Jpn. J. Appl. Phys. (1991)
10.1016/0022-0248(78)90152-5 / J. Cryst. Growth (1978)
10.1103/PhysRev.140.A2076 / Phys. Rev. (1965)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:18 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 7:16 p.m.)
Indexed	4 months, 4 weeks ago (March 31, 2025, 12:19 a.m.)
Issued	32 years, 5 months ago (March 1, 1993)
Published	32 years, 5 months ago (March 1, 1993)
Published Print	32 years, 5 months ago (March 1, 1993)

Funders 0

None

BibTeX

@article{Liu_1993, title={Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*}, volume={32}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.32.l434}, DOI={10.1143/jjap.32.l434}, number={3B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Liu, Kuang-Yu and Ueno, Keiji and Fujikawa, Yasunori and Koichiro Saiki, Koichiro Saiki and Atsushi Koma, Atsushi Koma}, year={1993}, month=mar, pages={L434} }

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