DOI: 10.1143/jjap.32.l1070. Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C<sub>60</sub> Thin Films

Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C60 Thin Films

10.1143/jjap.32.l1070

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Conductivity and its temperature dependence, conduction type, and field-effect mobility in metal (In or Sb)-doped C60 thin films are investigated together with those of undoped films. All electrical measurements have been conducted without exposure to air after deposition, in order to minimize the degradation of films due to incorporation of oxygen. For films with both dopants, (1) the conductivity is several orders of magnitude higher than that of undoped films, (2) the conductivity follows a semiconductor-like temperature dependence with the activation energy of 0.10-0.17 eV, which is much lower than that of the undoped films, 0.51 eV, (3) the conduction is n-type, and (4) the field-effect mobility is 0.03-0.04cm2/V·s. Enhancement of conductivity in metal-doped C60 films is attributed to the increase of both carrier concentration and mobility.

Bibliography

Hoshimono, K., Fujimori, S., Shizuo Fujita, S. F., & Shigeo Fujita, S. F. (1993). Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C60 Thin Films. Japanese Journal of Applied Physics, 32(8A), L1070.

Authors 4

Katsunori Hoshimono (first)
Shigeo Fujimori (additional)
Shizuo Fujita Shizuo Fujita (additional)
Shigeo Fujita Shigeo Fujita (additional)

References 11 Referenced 37

10.1038/347354a0 / Nature (1990)
10.1103/PhysRevLett.66.2637 / Phys. Rev. Lett. (1991)
10.1016/0038-1098(92)90552-K / Solid State Commun. (1992)
10.1016/S0009-2614(91)85142-J / Chem. Phys. Lett. (1991)
10.1088/0953-8984/3/47/001 / J. Phys. Condens. Matter (1991)
10.1063/1.108281 / Appl. Phys. Lett. (1992)
10.1016/0038-1098(92)90099-U / Solid State Commun. (1992)
10.1063/1.97417 / Appl. Phys. Lett. (1986)
10.1063/1.100171 / Appl. Phys. Lett (1988)
10.1063/1.105158 / Appl. Phys. Lett. (1991)
{'year': '1981', 'key': ''} (1981)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:27 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 7:25 p.m.)
Indexed	1 week, 5 days ago (Aug. 21, 2025, 1:10 p.m.)
Issued	32 years, 1 month ago (Aug. 1, 1993)
Published	32 years, 1 month ago (Aug. 1, 1993)
Published Print	32 years, 1 month ago (Aug. 1, 1993)

Funders 0

None

BibTeX

@article{Hoshimono_1993, title={Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C60 Thin Films}, volume={32}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.32.l1070}, DOI={10.1143/jjap.32.l1070}, number={8A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hoshimono, Katsunori and Fujimori, Shigeo and Shizuo Fujita, Shizuo Fujita and Shigeo Fujita, Shigeo Fujita}, year={1993}, month=aug, pages={L1070} }

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