DOI: 10.1143/jjap.32.6190. Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method

Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method

10.1143/jjap.32.6190

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Dramatic lateral grain growth of nondoped poly-Si films (maximum grain size: ∼4.5 µm, film thickness: 500 Å) with strong crystallographic (111) orientation on glass substrates has been achieved using an excimer laser annealing method, namely at low temperature below 400°C and in a processing time shorter than a second, for the first time. The surface morphology of these poly-Si films was very smooth and the crystallinity was excellent with minimal internal defects. These poly-Si films have monomodally distributed grain sizes, with an average grain size of around 1.5 µm. As a result of experimental study, we speculate that the basic driving force behind this lateral grain growth was surface free energy anisotropy, as the same mechanism was observed in high-temperature furnace annealing of doped poly-Si thin films.

Bibliography

Kuriyama, H., Nohda, T., Ishida, S., Kuwahara, T., Noguchi, S., Kiyama, S., Tsuda, S., & Nakano, S. (1993). Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method. Japanese Journal of Applied Physics, 32(12S), 6190.

Authors 8

Hiroyuki Kuriyama (first)
Tomoyuki Nohda (additional)
Satoshi Ishida (additional)
Takashi Kuwahara (additional)
Shigeru Noguchi (additional)
Seiichi Kiyama (additional)
Shinya Tsuda (additional)
Shoichi Nakano (additional)

References 25 Referenced 60

{'year': '1990', 'key': ''} (1990)
10.1109/EDL.1986.26372 / IEEE Trans. Electron Devices (1986)
10.1143/JJAP.30.3700 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.31.4500 / Jpn. J. Appl. Phys. (1992)
10.1109/16.40970 / IEEE Trans. Electron Devices (1989)
10.1143/JJAP.30.3704 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.32.474 / Jpn. J. Appl. Phys. (1993)
10.1143/JJAP.28.L2131 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.28.1789 / Jpn. J. Appl. Phys. (1989)
{'year': '1991', 'key': ''} (1991)
10.1109/16.249432 / IEEE Trans. Electron Devices (1993)
10.1143/JJAP.31.4545 / Jpn. J. Appl. Phys. (1993)
{'key': '', 'first-page': '1462', 'volume': 'ED-37', 'year': '1989', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1989)
10.1109/16.3346 / IEEE Trans. Electron Devices (1988)
10.1109/EDL.1987.26662 / IEEE Trans. Electron Devices (1987)
10.1143/JJAP.25.L291 / Jpn. J. Appl. Phys. (1986)
{'year': '1989', 'key': ''} (1989)
{'year': '1990', 'key': ''} (1990)
10.1109/16.65736 / IEEE Trans. Electron Devices (1991)
10.1149/1.2119520 / J. Electrochem. Soc. (1983)
10.1063/1.94842 / Appl. Phys. Lett. (1984)
10.1063/1.336194 / J. Appl. Phys. (1985)
10.1063/1.345756 / J. Appl. Phys. (1990)
10.1063/1.96510 / Appl. Phys. Lett. (1986)
10.1149/1.2425806 / J. Electrochem. Soc. (1963)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:33 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 5:39 p.m.)
Indexed	4 weeks, 1 day ago (Aug. 6, 2025, 8:40 a.m.)
Issued	31 years, 9 months ago (Dec. 1, 1993)
Published	31 years, 9 months ago (Dec. 1, 1993)
Published Print	31 years, 9 months ago (Dec. 1, 1993)

Funders 0

None

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T12:40:38Z",
    "timestamp": 1754484038496,
    "version": "3.37.3"
  },
  "reference-count": 25,
  "publisher": "IOP Publishing",
  "issue": "12S",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1993,
            12,
            1
          ]
        ],
        "date-time": "1993-12-01T00:00:00Z",
        "timestamp": 754704000000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1993,
            12,
            1
          ]
        ],
        "date-time": "1993-12-01T00:00:00Z",
        "timestamp": 754704000000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        12,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n   Dramatic lateral grain growth of nondoped poly-Si films (maximum grain size: \u223c4.5 \u00b5m, film thickness: 500 \u00c5) with strong crystallographic (111) orientation on glass substrates has been achieved using an excimer laser annealing method, namely at low temperature below 400\u00b0C and in a processing time shorter than a second, for the first time. The surface morphology of these poly-Si films was very smooth and the crystallinity was excellent with minimal internal defects. These poly-Si films have monomodally distributed grain sizes, with an average grain size of around 1.5 \u00b5m. As a result of experimental study, we speculate that the basic driving force behind this lateral grain growth was surface free energy anisotropy, as the same mechanism was observed in high-temperature furnace annealing of doped poly-Si thin films. \n </jats:p>",
  "DOI": "10.1143/jjap.32.6190",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        2,
        23
      ]
    ],
    "date-time": "2005-02-23T02:33:11Z",
    "timestamp": 1109125991000
  },
  "page": "6190",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 60,
  "title": "Lateral Grain Growth of Poly-Si Films with a Specific Orientation  by an Excimer Laser Annealing Method",
  "prefix": "10.35848",
  "volume": "32",
  "author": [
    {
      "given": "Hiroyuki",
      "family": "Kuriyama",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Tomoyuki",
      "family": "Nohda",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Satoshi",
      "family": "Ishida",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Takashi",
      "family": "Kuwahara",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Shigeru",
      "family": "Noguchi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Seiichi",
      "family": "Kiyama",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Shinya",
      "family": "Tsuda",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Shoichi",
      "family": "Nakano",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "year": "1990",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "276",
      "DOI": "10.1109/EDL.1986.26372",
      "volume": "EDL-7",
      "year": "1986",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3700",
      "DOI": "10.1143/JJAP.30.3700",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "4500",
      "DOI": "10.1143/JJAP.31.4500",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2868",
      "DOI": "10.1109/16.40970",
      "volume": "ED-36",
      "year": "1989",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3704",
      "DOI": "10.1143/JJAP.30.3704",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "474",
      "DOI": "10.1143/JJAP.32.474",
      "volume": "32",
      "year": "1993",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L2131",
      "DOI": "10.1143/JJAP.28.L2131",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1789",
      "DOI": "10.1143/JJAP.28.1789",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "year": "1991",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "112",
      "DOI": "10.1109/16.249432",
      "volume": "ED-40",
      "year": "1993",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "4545",
      "DOI": "10.1143/JJAP.31.4545",
      "volume": "31",
      "year": "1993",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "first-page": "1462",
      "volume": "ED-37",
      "year": "1989",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "923",
      "DOI": "10.1109/16.3346",
      "volume": "ED-35",
      "year": "1988",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "368",
      "DOI": "10.1109/EDL.1987.26662",
      "volume": "EDL-8",
      "year": "1987",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L291",
      "DOI": "10.1143/JJAP.25.L291",
      "volume": "25",
      "year": "1986",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "year": "1989",
      "key": ""
    },
    {
      "year": "1990",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "55",
      "DOI": "10.1109/16.65736",
      "volume": "ED-38",
      "year": "1991",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2050",
      "DOI": "10.1149/1.2119520",
      "volume": "130",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "603",
      "DOI": "10.1063/1.94842",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "763",
      "DOI": "10.1063/1.336194",
      "volume": "58",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "757",
      "DOI": "10.1063/1.345756",
      "volume": "67",
      "year": "1990",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "399",
      "DOI": "10.1063/1.96510",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "524",
      "DOI": "10.1149/1.2425806",
      "volume": "110",
      "year": "1963",
      "journal-title": "J. Electrochem. Soc."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.6190",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.6190/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.6190/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.6190/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        6
      ]
    ],
    "date-time": "2022-12-06T22:39:24Z",
    "timestamp": 1670366364000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.32.6190"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        12,
        1
      ]
    ]
  },
  "references-count": 25,
  "journal-issue": {
    "issue": "12S",
    "published-print": {
      "date-parts": [
        [
          1993,
          12,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.32.6190",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1993,
        12,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Lateral Grain Growth of Poly-Si Films with a Specific Orientation  by an Excimer Laser Annealing Method",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1993 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1993-07-21",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1993-09-18",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}