DOI: 10.1143/jjap.32.12. Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon

Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon

10.1143/jjap.32.12

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Thermal oxidation of silicon was conducted under the application of external compressive or tensile stress at relatively low oxidation temperature. The effect of external stress appeared in different ways depending on the oxidation temperature. While the stress effect of oxidation at 800°C was well interpreted with the linear-parabolic oxidation model (L-P model), that at a temperature lower than 700°C contradicted the L-P model and strongly suggested the existence of an oxidation reaction of interstitial silicon atoms in the oxide.

Bibliography

Tamura, T., Tanaka, N., Tagawa, M., Nobuo Ohmae, N. O., & Masataka Umeno, M. U. (1993). Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon. Japanese Journal of Applied Physics, 32(1R), 12.

Authors 5

Takao Tamura (first)
Naoya Tanaka (additional)
Masahito Tagawa (additional)
Nobuo Ohmae Nobuo Ohmae (additional)
Masataka Umeno Masataka Umeno (additional)

References 18 Referenced 24

10.1116/1.574007 / J. Vac. Sci. & Technol. A (1986)
10.1149/1.2123617 / J. Electrochem. Soc. (1982)
{'volume': '30', 'journal-title': 'Appl. Surf. Sci.', 'year': '1987', 'key': ''} / Appl. Surf. Sci. (1987)
10.1080/13642818708211201 / Philos. Mag. B (1987)
10.1063/1.339842 / J. Appl. Phys. (1987)
10.1116/1.583853 / J. Vac. Sci. & Technol. B (1987)
10.1063/1.1713945 / J. Appl. Phys. (1965)
10.1063/1.337003 / J. Appl. Phys. (1986)
10.1063/1.342759 / J. Appl. Phys. (1989)
10.1098/rspa.1909.0021 / Proc. Roy. Soc. London A (1909)
10.1149/1.2130002 / J. Electrochem. Soc. (1980)
10.1063/1.99676 / Appl. Phys. Lett. (1988)
10.1116/1.584708 / J. Vac. Sci. & Technol. B (1989)
10.1116/1.583944 / J. Vac. Sci. & Technol. B (1987)
10.1149/1.2100661 / J. Electrochem. Soc. (1987)
10.1149/1.2127482 / J. Electrochem. Soc. (1981)
10.1063/1.1661935 / J. Appl. Phys. (1973)
10.1063/1.1663459 / J. Appl. Phys. (1974)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:17 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 1:20 p.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:34 a.m.)
Issued	32 years, 8 months ago (Jan. 1, 1993)
Published	32 years, 8 months ago (Jan. 1, 1993)
Published Print	32 years, 8 months ago (Jan. 1, 1993)

Funders 0

None

BibTeX

@article{Tamura_1993, title={Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon}, volume={32}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.32.12}, DOI={10.1143/jjap.32.12}, number={1R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Tamura, Takao and Tanaka, Naoya and Tagawa, Masahito and Nobuo Ohmae, Nobuo Ohmae and Masataka Umeno, Masataka Umeno}, year={1993}, month=jan, pages={12} }

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