Abstract
Field ion-scanning tunneling microscopy was employed to study the monolayer and multilayer adsorption behaviors of the C60 fullerene on the Si(100)2×1 surface. The C60 molecules reside stably in the trough at room temperature without rotation, encompassing the 8 neighbouring dimer-forming surface Si atoms with the nearest neighbour distance of 12 Å. For the first and second layers, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with the hexagonal packing was observed above the third layer with its lattice constant of 10.4 Å.
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 9:10 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 5:02 p.m.) |
Indexed | 1 month, 1 week ago (July 12, 2025, 6:46 p.m.) |
Issued | 33 years, 1 month ago (July 1, 1992) |
Published | 33 years, 1 month ago (July 1, 1992) |
Published Print | 33 years, 1 month ago (July 1, 1992) |
@article{Hashizume_1992, title={Field Ion-Scanning Tunneling Microscopy Study of C60 on the Si(100) Surface}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l880}, DOI={10.1143/jjap.31.l880}, number={7A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hashizume, Tomihiro and Wang, Xiang-Dong and Nishina, Yuichiro and Shinohara, Hisanori and Saito, Yahachi and Young Kuk, Young Kuk and Toshio Sakurai, Toshio Sakurai}, year={1992}, month=jul, pages={L880} }