DOI: 10.1143/jjap.31.l646. Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

10.1143/jjap.31.l646

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Fabrication and characteristics of Schottky gated poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene) field-effect transistors (FETs) have been reported for the first time. The FET has been realized utilizing the polymer film formed on a Schottky gated electrode deposited upon a glass substrate. From FET characteristics, the carrier concentrations and carrier mobilities are evaluated for poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene). Electrical properties are discussed on the basis of the FET characteristics for the nominally undoped samples.

Bibliography

Ohmori, Y., Muro, K., Onoda, M., & Katsumi Yoshino, K. Y. (1992). Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene). Japanese Journal of Applied Physics, 31(5B), L646.

Authors 4

Yutaka Ohmori (first)
Keiro Muro (additional)
Mitsuyoshi Onoda (additional)
Katsumi Yoshino Katsumi Yoshino (additional)

References 12 Referenced 17

10.1143/JJAP.27.L454 / Jpn. J. Appl. Phys. (1988)
10.1143/JJAP.25.881 / Jpn. J. Appl. Phys. (1986)
{'key': '', 'first-page': '503', 'volume': '24', 'year': '1986', 'journal-title': 'J. Polym. Sci. C'} / J. Polym. Sci. C (1986)
10.1088/0022-3727/24/7/020 / J. Phys. D (1991)
10.1063/1.97417 / Appl. Phys. Lett. (1986)
10.1143/JJAP.24.L553 / Jpn. J. Appl. Phys. (1985)
10.1143/JJAP.30.L610 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.30.L1247 / Jpn. J. Appl. Phys. (1991)
{'key': '', 'first-page': '327', 'volume': '25', 'year': '1984', 'journal-title': 'Polym. Commun.'} / Polym. Commun. (1984)
{'year': '1981', 'key': ''} (1981)
10.1143/JJAP.29.L1849 / Jpn. J. Appl. Phys. (1990)
{'year': '1991', 'key': ''} (1991)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:07 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 4:58 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:34 a.m.)
Issued	33 years, 3 months ago (May 1, 1992)
Published	33 years, 3 months ago (May 1, 1992)
Published Print	33 years, 3 months ago (May 1, 1992)

Funders 0

None

BibTeX

@article{Ohmori_1992, title={Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l646}, DOI={10.1143/jjap.31.l646}, number={5B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ohmori, Yutaka and Muro, Keiro and Onoda, Mitsuyoshi and Katsumi Yoshino, Katsumi Yoshino}, year={1992}, month=may, pages={L646} }

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