Abstract
Picosecond luminescence decay is observed for the first time in porous Si. This decay consists of two exponential decay components that become large with decreasing emission energy. Besides the picosecond luminescence decay, nanosecond luminescence decay was also observed. This shows nonexponential decay behavior with dominant components between 100 ns and 1 µs. This also becomes large with decreasing emission energy. Based on our results, the luminescence in porous Si seems to originate partially from the amorphous phase.
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(1984)
Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 9:07 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 4:54 p.m.) |
Indexed | 6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.) |
Issued | 33 years, 4 months ago (May 1, 1992) |
Published | 33 years, 4 months ago (May 1, 1992) |
Published Print | 33 years, 4 months ago (May 1, 1992) |
@article{Matsumoto_1992, title={Picosecond Luminescence Decay in Porous Silicon}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l619}, DOI={10.1143/jjap.31.l619}, number={5B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Matsumoto, Takahiro and Daimon, Masahiro and Toshiro Futagi, Toshiro Futagi and Hidenori Mimura, Hidenori Mimura}, year={1992}, month=may, pages={L619} }