Abstract
Tantalum pentaoxide thin films with orthorhombic structure have been grown on quartz and Si(100) substrates at 600∼700°C under reduced pressure of 5 Torr by metalorganic chemical vapor deposition. Ta(OC2H5)5 and Ta(DPM)4Cl were used as the source materials, and were compared with each other with respect to deposition behavior, crystal structure and orientation of Ta2O5 films. When the Ta(DPM)4Cl precursor was used, fine (111)-oriented Ta2O5 films were obtained on quartz and Si(100) substrates in a temperature range of 625∼675°C.
References
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 9:07 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 5:47 p.m.) |
Indexed | 2 months ago (June 24, 2025, 7:28 a.m.) |
Issued | 33 years, 3 months ago (May 1, 1992) |
Published | 33 years, 3 months ago (May 1, 1992) |
Published Print | 33 years, 3 months ago (May 1, 1992) |
@article{Tominaga_1992, title={Preparation of (111)-Oriented β-Ta2O5 Thin Films by Chemical Vapor Deposition Using Metalorganic Precursors}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l585}, DOI={10.1143/jjap.31.l585}, number={5A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Tominaga, Koji and Muhammet, Rusul and Kobayashi, Ichizo and Masaru Okada, Masaru Okada}, year={1992}, month=may, pages={L585} }