DOI: 10.1143/jjap.31.l1457. High-Quality InGaN Films Grown on GaN Films

High-Quality InGaN Films Grown on GaN Films

10.1143/jjap.31.l1457

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

InGaN films were grown on GaN films with a high indium source flow rate and high growth temperatures between 780°C and 830°C. Strong and sharp band-edge (BE) emissions between 400 nm and 445 nm were observed, while deep-level emissions were barely observed in photoluminescence (PL) measurements at room temperature. The full width at half-maximum (FWHM) of the BE emissions was about 70 meV. The FWHM of the double-crystal X-ray rocking curve (XRC) from the InGaN films was about 8 minutes. This value of FWHM was the smallest one ever reported for InGaN films, and was almost the same as that of the GaN films which were used as the substrate.

Bibliography

Shuji Nakamura, S. N., & Takashi Mukai, T. M. (1992). High-Quality InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 31(10B), L1457.

Authors 2

Shuji Nakamura Shuji Nakamura (first)
Takashi Mukai Takashi Mukai (additional)

References 14 Referenced 203

10.1063/1.105472 / Appl. Phys. Lett. (1991)
10.1063/1.107109 / Appl. Phys. Lett. (1992)
10.1063/1.107123 / Appl. Phys. Lett. (1992)
10.1063/1.96549 / Appl. Phys. Lett. (1986)
10.1016/0022-0248(89)90200-5 / J. Cryst. Growth (1989)
{'key': '', 'first-page': '725', 'volume': '106', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1989)
10.1143/JJAP.28.L2112 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.30.L1708 / Jpn. J. Appl. Phys. (1991)
10.1143/JJAP.30.L1998 / Jpn. J. Appl. Phys. (1991)
{'key': '', 'first-page': '141', 'volume': '106', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1989)
10.1143/JJAP.28.L1334 / Jpn. J. Appl. Phys. (1989)
10.1063/1.106086 / Appl. Phys. Lett. (1991)
10.1143/JJAP.30.1620 / Jpn. J. Appl. Phys. (1991)
10.1063/1.105239 / Appl. Phys. Lett. (1991)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:13 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 5:23 p.m.)
Indexed	4 months, 1 week ago (April 19, 2025, 12:10 a.m.)
Issued	32 years, 10 months ago (Oct. 1, 1992)
Published	32 years, 10 months ago (Oct. 1, 1992)
Published Print	32 years, 10 months ago (Oct. 1, 1992)

Funders 0

None

BibTeX

@article{Shuji_Nakamura_1992, title={High-Quality InGaN Films Grown on GaN Films}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l1457}, DOI={10.1143/jjap.31.l1457}, number={10B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Shuji Nakamura, Shuji Nakamura and Takashi Mukai, Takashi Mukai}, year={1992}, month=oct, pages={L1457} }

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