Abstract
The photoluminescence decay of both as-prepared and dry-oxidized porous Si excited by a nitrogen laser pulse is not exponential, but is fitted well by two exponential decays with lifetimes ranging from a few nanoseconds to over 100 nanoseconds. Further, those lifetimes do not change with changing excitation power by more than three orders of magnitude. The lifetime of dry-oxidized porous Si is longer than that of as-prepared porous Si. These studies would suggest that the photoluminescence mechanism is basically the same for both as-prepared and dry-oxidized porous Si, and the radiative recombination path is through some luminescence centers lying in the widened band gap owing to quantum size effects.
References
9
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/ J. Appl. Phys. (1992){'year': '1991', 'key': ''}
(1991){'year': '1989', 'key': ''}
(1989)
Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 9:13 p.m.) |
Deposited | 2 years, 9 months ago (Dec. 6, 2022, 5:33 p.m.) |
Indexed | 6 months, 2 weeks ago (Feb. 21, 2025, 5:35 a.m.) |
Issued | 32 years, 11 months ago (Oct. 1, 1992) |
Published | 32 years, 11 months ago (Oct. 1, 1992) |
Published Print | 32 years, 11 months ago (Oct. 1, 1992) |
@article{Yamada_1992, title={Comparison of Photoluminescence Lifetimes between As-Prepared and Dry-Oxidized Porous Si}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l1451}, DOI={10.1143/jjap.31.l1451}, number={10B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yamada, Masao and Akira Takazawa, Akira Takazawa and Tetsuro Tamura, Tetsuro Tamura}, year={1992}, month=oct, pages={L1451} }