Abstract
A new method for obtaining real-time monitoring of stressed interconnects has been discovered. This technique uses the focused ion beam (FIB) system. Under a stress of 3 MA/cm2 at 473 K, voids grown at a triple point occurred in Al-1.0%Si interconnects, and hillocks formed, as is seen during in situ observation of the aluminum microstructure. Since this study is theoretical, additional observation and study of the electromigration phenomenon using in situ monitoring is recommended.
References
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Referenced
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10.1116/1.585694
/ J. Vac. Sci. & Technol. B (1991){'year': '1989', 'key': ''}
(1989){'key': '', 'first-page': '77', 'volume': '33', 'year': '1990', 'journal-title': 'Solid State Technol.'}
/ Solid State Technol. (1990){'year': '1985', 'key': ''}
(1985){'year': '1990', 'key': ''}
(1990){'year': '1991', 'key': ''}
(1991){'year': '1991', 'key': ''}
(1991){'key': '', 'first-page': '35', 'volume': '34', 'year': '1991', 'journal-title': 'Solid State Technol.'}
/ Solid State Technol. (1991)
@article{Masa_Ichi_Kumikawa_1992, title={In Situ Focused Ion Beam (FIB) Observation of Al Electromigration}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.l1147}, DOI={10.1143/jjap.31.l1147}, number={8B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Masa-Ichi Kumikawa, Masa-Ichi Kumikawa and Hirotaka Komoda, Hirotaka Komoda}, year={1992}, month=aug, pages={L1147} }