DOI: 10.1143/jjap.31.3662. Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

10.1143/jjap.31.3662

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We propose a general method to obtain high conductivity of either type in wide gap semiconductors where compensation normally limits conductivity of one or both types. We suggest that the successes of Amano et al. and of Nakamura et al. in obtaining more than 1018 cm-3 holes in GaN are particular examples of the general process that we propose.

Bibliography

Vechten, J. A. V., Zook, J. D., Horning, R. D., & Goldenberg, B. (1992). Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation. Japanese Journal of Applied Physics, 31(11R), 3662.

Authors 4

James A. Van Vechten (first)
J. David Zook (additional)
Robert D. Horning (additional)
Barbara Goldenberg (additional)

References 14 Referenced 147

{'year': '1980', 'key': ''} (1980)
10.1103/PhysRevB.13.1622 / Phys. Rev. B (1976)
10.1146/annurev.ms.07.080177.002313 / Ann. Rev. Mater. Sci. (1977)
10.1103/PhysRevB.15.4119 / Phys. Rev. B (1977)
10.1557/PROC-46-83 / Mater. Res. Soc. Symp. Proc. (1985)
10.1016/0375-9601(79)90242-1 / Phys. Lett. A (1979)
10.1063/1.96607 / Appl. Phys. Lett. (1986)
10.1002/pssa.2210390151 / Phys. Status. Solidi A (1977)
{'year': '1988', 'key': ''} (1988)
{'year': '1991', 'key': ''} (1991)
{'year': '1991', 'key': ''} (1991)
10.1143/JJAP.28.L2172 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.30.L1708 / Jpn. J. Appl. (1991)
10.1143/JJAP.15.1943 / Jpn. J. Appl. Phys. (1976)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:15 p.m.)
Deposited	2 years, 9 months ago (Dec. 6, 2022, 3:57 p.m.)
Indexed	2 weeks, 2 days ago (Aug. 21, 2025, 1:36 p.m.)
Issued	32 years, 10 months ago (Nov. 1, 1992)
Published	32 years, 10 months ago (Nov. 1, 1992)
Published Print	32 years, 10 months ago (Nov. 1, 1992)

Funders 0

None

BibTeX

@article{Vechten_1992, title={Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.3662}, DOI={10.1143/jjap.31.3662}, number={11R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Vechten, James A. Van and Zook, J. David and Horning, Robert D. and Goldenberg, Barbara}, year={1992}, month=nov, pages={3662} }

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