DOI: 10.1143/jjap.31.192. Preparation and Characterization of CuInSe<sub>2</sub> Thin Films by Molecular-Beam Deposition Method

Preparation and Characterization of CuInSe2 Thin Films by Molecular-Beam Deposition Method

10.1143/jjap.31.192

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Polycrystalline CuInSe2 films were prepared by coevaporation of the elements under an ultrahigh vacuum by a molecular-beam deposition method. The composition of the film was controlled by changing the In molecular-beam flux intensity while the other elements remained at a constant value. It is shown, at the substrate temperature of 500°C, that there is a critical In molecular-beam flux intensity for the fabrication of stoichiometric films. At the In molecular-beam intensities higher than the critical value, single-phase CuInSe2 films with nearly constant compositions are obtained as a result of the removal effects of excess In. It is shown that the present coevaporation process is suitable for the fabrication of stoichiometric or slightly In-rich composition films. Furthermore, the structural and electrical properties of the films were investigated and discussed in relation to film composition.

Bibliography

Nishitani, M., Negami, T., Masaharu Terauchi, M. T., & Takashi Hirao, T. H. (1992). Preparation and Characterization of CuInSe2 Thin Films by Molecular-Beam Deposition Method. Japanese Journal of Applied Physics, 31(2R), 192.

Authors 4

Mikihiko Nishitani (first)
Takayuki Negami (additional)
Masaharu Terauchi Masaharu Terauchi (additional)
Takashi Hirao Takashi Hirao (additional)

References 15 Referenced 34

10.1179/imr.1989.34.1.185 / Int. Mater. Rev. (1989)
{'year': '1988', 'key': ''} (1988)
{'year': '1989', 'key': ''} (1989)
10.1109/16.46376 / IEEE Trans. Electron Devices (1990)
10.1063/1.327504 / J. Appl. Phys. (1980)
{'key': ''}
10.1063/1.95350 / Appl. Phys. Lett. (1984)
{'year': '1986', 'key': ''} (1986)
10.1016/0379-6787(86)90082-7 / Sol. Cell (1986)
10.1016/0379-6787(86)90079-7 / Sol. Cell (1986)
{'journal-title': 'Thin Solid Films.', 'key': ''} / Thin Solid Films.
10.1016/0379-6787(86)90100-6 / Sol. Cell (1986)
10.1143/JJAP.28.L1337 / Jpn. J. Appl. Phys. (1989)
{'key': '', 'first-page': '337', 'volume': '58', 'year': '1985', 'journal-title': 'Physica Acta.'} / Physica Acta. (1985)
{'year': '1990', 'key': ''} (1990)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:04 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 4:31 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:35 a.m.)
Issued	33 years, 6 months ago (Feb. 1, 1992)
Published	33 years, 6 months ago (Feb. 1, 1992)
Published Print	33 years, 6 months ago (Feb. 1, 1992)

Funders 0

None

BibTeX

@article{Nishitani_1992, title={Preparation and Characterization of CuInSe2 Thin Films by Molecular-Beam Deposition Method}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.192}, DOI={10.1143/jjap.31.192}, number={2R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nishitani, Mikihiko and Negami, Takayuki and Masaharu Terauchi, Masaharu Terauchi and Takashi Hirao, Takashi Hirao}, year={1992}, month=feb, pages={192} }

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