DOI: 10.1143/jjap.31.1695. Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication

Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication

10.1143/jjap.31.1695

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Growth characteristics and device application of the selective surface doping method in lateral solid phase epitaxy (L-SPE) are presented. In this method, P atoms are incorporated near the surface of amorphous Si (a-Si) films to enhance the L-SPE growth and the underlying undoped layers are used for device fabrication. First, the growth characteristics are investigated by changing thicknesses of the a-Si film and the P-doped layer, and a quantitative model to explain the experimental results is presented. Then, it is shown that redistribution of the P atoms during L-SPE annealing is negligibly small, and the P-doped layer is selectively etched by combination of a wet chemical etchant and subsequent reactive ion etching. Finally, metal-oxide-semiconductor field-effect transistors (MOSFETs) with upper and lower gate electrodes are fabricated in the undoped layer and the electrical properties of both the upper and lower channel FETs are investigated.

Bibliography

Ishiwara, H., Toru Dan, T. D., & Kazuichi Fukao, K. F. (1992). Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication. Japanese Journal of Applied Physics, 31(6R), 1695.

Authors 3

Hiroshi Ishiwara (first)
Toru Dan Toru Dan (additional)
Kazuichi Fukao Kazuichi Fukao (additional)

References 14 Referenced 3

10.1109/EDL.1983.25730 / IEEE Electron Device Lett. (1983)
10.1063/1.94217 / Appl. Phys. Lett. (1983)
10.1063/1.99626 / Appl. Phys. Lett. (1988)
10.1063/1.95653 / Appl. Phys. Lett. (1985)
10.1063/1.96717 / Appl. Phys. Lett. (1986)
10.1063/1.97325 / Appl. Phys. Lett. (1986)
10.1063/1.341565 / J. Appl. Phys. (1988)
10.1063/1.100179 / Appl. Phys. Lett. (1988)
10.1143/JJAP.24.411 / Jpn. J. Appl. Phys. (1985)
10.1143/JJAP.25.667 / Jpn. J. Appl. Phys. (1986)
10.1063/1.329901 / J. Appl. Phys. (1982)
{'year': '1975', 'key': ''} (1975)
10.1143/JJAP.29.L521 / Jpn. J. Appl. Phys. (1990)
10.1063/1.99017 / Appl. Phys. Lett. (1988)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:09 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 5:02 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:34 a.m.)
Issued	33 years, 2 months ago (June 1, 1992)
Published	33 years, 2 months ago (June 1, 1992)
Published Print	33 years, 2 months ago (June 1, 1992)

Funders 0

None

BibTeX

@article{Ishiwara_1992, title={Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication}, volume={31}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.31.1695}, DOI={10.1143/jjap.31.1695}, number={6R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishiwara, Hiroshi and Toru Dan, Toru Dan and Kazuichi Fukao, Kazuichi Fukao}, year={1992}, month=jun, pages={1695} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:34:57Z",
    "timestamp": 1740134097049,
    "version": "3.37.3"
  },
  "reference-count": 14,
  "publisher": "IOP Publishing",
  "issue": "6R",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1992,
            6,
            1
          ]
        ],
        "date-time": "1992-06-01T00:00:00Z",
        "timestamp": 707356800000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1992,
            6,
            1
          ]
        ],
        "date-time": "1992-06-01T00:00:00Z",
        "timestamp": 707356800000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1992,
        6,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n   Growth characteristics and device application of the selective surface doping method in lateral solid phase epitaxy (L-SPE) are presented. In this method, P atoms are incorporated near the surface of amorphous Si (a-Si) films to enhance the L-SPE growth and the underlying undoped layers are used for device fabrication. First, the growth characteristics are investigated by changing thicknesses of the a-Si film and the P-doped layer, and a quantitative model to explain the experimental results is presented. Then, it is shown that redistribution of the P atoms during L-SPE annealing is negligibly small, and the P-doped layer is selectively etched by combination of a wet chemical etchant and subsequent reactive ion etching. Finally, metal-oxide-semiconductor field-effect transistors (MOSFETs) with upper and lower gate electrodes are fabricated in the undoped layer and the electrical properties of both the upper and lower channel FETs are investigated. \n </jats:p>",
  "DOI": "10.1143/jjap.31.1695",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        2,
        23
      ]
    ],
    "date-time": "2005-02-23T02:09:27Z",
    "timestamp": 1109124567000
  },
  "page": "1695",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 3,
  "title": "Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication",
  "prefix": "10.35848",
  "volume": "31",
  "author": [
    {
      "given": "Hiroshi",
      "family": "Ishiwara",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Toru Dan",
      "family": "Toru Dan",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Kazuichi Fukao",
      "family": "Kazuichi Fukao",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "272",
      "DOI": "10.1109/EDL.1983.25730",
      "volume": "EDL-4",
      "year": "1983",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1028",
      "DOI": "10.1063/1.94217",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1788",
      "DOI": "10.1063/1.99626",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "268",
      "DOI": "10.1063/1.95653",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "773",
      "DOI": "10.1063/1.96717",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1363",
      "DOI": "10.1063/1.97325",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3018",
      "DOI": "10.1063/1.341565",
      "volume": "64",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2626",
      "DOI": "10.1063/1.100179",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "411",
      "DOI": "10.1143/JJAP.24.411",
      "volume": "24",
      "year": "1985",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "667",
      "DOI": "10.1143/JJAP.25.667",
      "volume": "25",
      "year": "1986",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "397",
      "DOI": "10.1063/1.329901",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "year": "1975",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L521",
      "DOI": "10.1143/JJAP.29.L521",
      "volume": "29",
      "year": "1990",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1681",
      "DOI": "10.1063/1.99017",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.31.1695",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.31.1695/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.31.1695/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.31.1695/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        6
      ]
    ],
    "date-time": "2022-12-06T22:02:14Z",
    "timestamp": 1670364134000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.31.1695"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992,
        6,
        1
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "6R",
    "published-print": {
      "date-parts": [
        [
          1992,
          6,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.31.1695",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1992,
        6,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1992 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1991-10-09",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1992-04-18",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}