Abstract
An electrically erasable memory device is fabricated using a conducting polymer and solid polymer electrolyte. The conductivity of the memory channel consisting of the conducting polymer is controlled by electrochemical doping through the counter (writing) electrode. The channel conductivity was varied by the number of writing or erasing pulses by 3-4 orders of magnitude.
References
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:50 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 7:17 p.m.) |
Indexed | 5 months ago (March 24, 2025, 2:45 a.m.) |
Issued | 34 years, 6 months ago (Feb. 1, 1991) |
Published | 34 years, 6 months ago (Feb. 1, 1991) |
Published Print | 34 years, 6 months ago (Feb. 1, 1991) |
@article{Kaneto_1991, title={Memory Device Using a Conducting Polymer and Solid Polymer Electrolyte}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.l215}, DOI={10.1143/jjap.30.l215}, number={2A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kaneto, Keiichi and Tanemasa Asano, Tanemasa Asano and Wataru Takashima, Wataru Takashima}, year={1991}, month=feb, pages={L215} }