DOI: 10.1143/jjap.30.l1620. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

10.1143/jjap.30.l1620

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We propose a new material, ZnMgSSe, as the cladding layer of a blue-light laser diode. Band-gap energy can be varied from 2.8 to near 4 eV, maintaining lattice-matching to a (100)GaAs substrate. The band-gap energies of MgS and MgSe (zincblende structure) are estimated to be about 4.5 eV and 3.6 eV, and the lattice constants are 5.62 Å and 5.89 Å, respectively. The refractive index of ZnMgSSe lattice-matched to GaAs is smaller than that of ZnSSe lattice-matched to GaAs. ZnMgSSe meets the requirements of the cladding layer of ZnSSe for fabricating the blue-light laser diode.

Bibliography

Okuyama, H., Nakano, K., Takao Miyajima, T. M., & Katsuhiro Akimoto, K. A. (1991). Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30(9B), L1620.

Authors 4

Hiroyuki Okuyama (first)
Kazushi Nakano (additional)
Takao Miyajima Takao Miyajima (additional)
Katsuhiro Akimoto Katsuhiro Akimoto (additional)

References 10 Referenced 252

10.1143/JJAP.28.L531 / Jpn. J. Appl. Phys. (1989)
10.1063/1.346777 / J. Appl. Phys. (1990)
10.1063/1.103919 / Appl. Phys. Lett. (1990)
10.1063/1.104006 / Appl. Phys. Lett. (1990)
10.1103/PhysRevB.39.3138 / Phys. Rev. B (1989)
10.1143/JJAP.30.L152 / Jpn. J. Appl. Phys. (1991)
{'year': '1960', 'key': ''} (1960)
{'year': '1982', 'key': ''} (1982)
{'year': '1978', 'key': ''} (1978)
10.1103/PhysRevB.38.1417 / Phys. Rev. B (1988)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:57 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 12:48 p.m.)
Indexed	1 month, 2 weeks ago (July 7, 2025, 9:06 a.m.)
Issued	33 years, 11 months ago (Sept. 1, 1991)
Published	33 years, 11 months ago (Sept. 1, 1991)
Published Print	33 years, 11 months ago (Sept. 1, 1991)

Funders 0

None

BibTeX

@article{Okuyama_1991, title={Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.l1620}, DOI={10.1143/jjap.30.l1620}, number={9B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Okuyama, Hiroyuki and Nakano, Kazushi and Takao Miyajima, Takao Miyajima and Katsuhiro Akimoto, Katsuhiro Akimoto}, year={1991}, month=sep, pages={L1620} }

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