DOI: 10.1143/jjap.30.l1221. Efficient Visible Photoluminescence from Porous Silicon

Efficient Visible Photoluminescence from Porous Silicon

10.1143/jjap.30.l1221

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

It is shown that UV-excited porous Si (PS) exhibits an efficient visible photoluminescence (PL) at room temperature. The PS layers were formed by anodization of p-type and n-type single-crystal Si wafers in aqueous HF solutions. The peak wavelength of PL spectra depends on the anodization parameters including the resistivity and the conduction type of Si substrates. The PL spectra can be tuned to a higher energy side by either adjustment of the anodizing conditions or chemical etching after anodization. These remarkable results can be interpreted as a result of quantum size effects in PS.

Bibliography

Nobuyoshi Koshida, N. K., & Hideki Koyama, H. K. (1991). Efficient Visible Photoluminescence from Porous Silicon. Japanese Journal of Applied Physics, 30(7B), L1221.

Authors 2

Nobuyoshi Koshida Nobuyoshi Koshida (first)
Hideki Koyama Hideki Koyama (additional)

References 28 Referenced 123

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Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:56 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 7:38 p.m.)
Indexed	1 month ago (Aug. 3, 2025, 6:55 p.m.)
Issued	34 years, 2 months ago (July 1, 1991)
Published	34 years, 2 months ago (July 1, 1991)
Published Print	34 years, 2 months ago (July 1, 1991)

Funders 0

None

BibTeX

@article{Nobuyoshi_Koshida_1991, title={Efficient Visible Photoluminescence from Porous Silicon}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.l1221}, DOI={10.1143/jjap.30.l1221}, number={7B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nobuyoshi Koshida, Nobuyoshi Koshida and Hideki Koyama, Hideki Koyama}, year={1991}, month=jul, pages={L1221} }

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