DOI: 10.1143/jjap.30.3759. GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties

GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties

10.1143/jjap.30.3759

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)17SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans-planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM's enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.

Bibliography

Nakagawa, O. S., Ashok, S., Sheen, C. W., MÃ¤rtensson, J., & Allara, D. L. (1991). GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties. Japanese Journal of Applied Physics, 30(12S), 3759.

Authors 5

O. S. Nakagawa (first)
S. Ashok (additional)
C. W. Sheen (additional)
J. Märtensson (additional)
D. L. Allara (additional)

References 20 Referenced 77

10.1116/1.569796 / J. Vac. Sci. & Technol. (1978)
10.1016/0039-6028(83)90550-2 / Surf. Sci. (1983)
10.1063/1.90886 / Appl. Phys. Lett. (1979)
10.1063/1.98877 / Appl. Phys. Lett: (1987)
10.1063/1.98415 / Appl. Phys. Lett. (1987)
10.1063/1.99524 / Appl. Phys. Lett. (1988)
10.1063/1.99024 / Appl. Phys. Lett. (1988)
{'volume': '52', 'year': '1988', 'first-page': '2157', 'key': ''} (1988)
10.1063/1.100065 / Appl. Phys. Lett. (1988)
10.1063/1.348623 / J. Appl. Phys. (1991)
10.1063/1.100572 / Appl. Phys. Lett. (1988)
10.1143/JJAP.27.L2125 / Jpn. J. Appl. Phys. (1988)
{'key': ''}
10.1063/1.101268 / Appl. Phys. Lett. (1989)
10.1116/1.585743 / J. Vac. Sci. & Technol. (1991)
10.1080/00018738500101801 / Adv. Phys. (1985)
{'key': '', 'first-page': '125', 'volume': '131', 'year': '1984', 'journal-title': 'Proc. IEE Part 1'} / Proc. IEE Part 1 (1984)
{'volume': '20', 'journal-title': 'Electronics Lett.', 'key': ''} / Electronics Lett.
{'year': '1988', 'key': ''} (1988)
10.1021/ja00246a011 / J. Am. Chem. Soc. (1987)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 9:02 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 6:08 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:34 a.m.)
Issued	33 years, 8 months ago (Dec. 1, 1991)
Published	33 years, 8 months ago (Dec. 1, 1991)
Published Print	33 years, 8 months ago (Dec. 1, 1991)

Funders 0

None

BibTeX

@article{Nakagawa_1991, title={GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.3759}, DOI={10.1143/jjap.30.3759}, number={12S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nakagawa, O. S. and Ashok, S. and Sheen, C. W. and Märtensson, J. and Allara, D. L.}, year={1991}, month=dec, pages={3759} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:34:28Z",
    "timestamp": 1740134068937,
    "version": "3.37.3"
  },
  "reference-count": 20,
  "publisher": "IOP Publishing",
  "issue": "12S",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1991,
            12,
            1
          ]
        ],
        "date-time": "1991-12-01T00:00:00Z",
        "timestamp": 691545600000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1991,
            12,
            1
          ]
        ],
        "date-time": "1991-12-01T00:00:00Z",
        "timestamp": 691545600000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1991,
        12,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n   A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH<jats:sub>3</jats:sub>(CH<jats:sub>2</jats:sub>)<jats:sub>17</jats:sub>SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans-planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM's enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties. \n </jats:p>",
  "DOI": "10.1143/jjap.30.3759",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        2,
        23
      ]
    ],
    "date-time": "2005-02-23T02:02:38Z",
    "timestamp": 1109124158000
  },
  "page": "3759",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 77,
  "title": "GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties",
  "prefix": "10.35848",
  "volume": "30",
  "author": [
    {
      "given": "O. S.",
      "family": "Nakagawa",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "S.",
      "family": "Ashok",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "C. W.",
      "family": "Sheen",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "M\u00e4rtensson",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "D. L.",
      "family": "Allara",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1402",
      "DOI": "10.1116/1.569796",
      "volume": "15",
      "year": "1978",
      "journal-title": "J. Vac. Sci. & Technol."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "406",
      "DOI": "10.1016/0039-6028(83)90550-2",
      "volume": "132",
      "year": "1983",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "594",
      "DOI": "10.1063/1.90886",
      "volume": "34",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "33",
      "DOI": "10.1063/1.98877",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett:"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "439",
      "DOI": "10.1063/1.98415",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "216",
      "DOI": "10.1063/1.99524",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1707",
      "DOI": "10.1063/1.99024",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "volume": "52",
      "year": "1988",
      "first-page": "2157",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1059",
      "DOI": "10.1063/1.100065",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2717",
      "DOI": "10.1063/1.348623",
      "volume": "69",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "66",
      "DOI": "10.1063/1.100572",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L2125",
      "DOI": "10.1143/JJAP.27.L2125",
      "volume": "27",
      "year": "1988",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1799",
      "DOI": "10.1063/1.101268",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2333",
      "DOI": "10.1116/1.585743",
      "volume": "B9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. & Technol."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "475",
      "DOI": "10.1080/00018738500101801",
      "volume": "34",
      "year": "1985",
      "journal-title": "Adv. Phys."
    },
    {
      "key": "",
      "first-page": "125",
      "volume": "131",
      "year": "1984",
      "journal-title": "Proc. IEE Part 1"
    },
    {
      "volume": "20",
      "journal-title": "Electronics Lett.",
      "key": ""
    },
    {
      "year": "1988",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3559",
      "DOI": "10.1021/ja00246a011",
      "volume": "109",
      "year": "1987",
      "journal-title": "J. Am. Chem. Soc."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.30.3759",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.30.3759/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.30.3759/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.30.3759/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        6
      ]
    ],
    "date-time": "2022-12-06T23:08:47Z",
    "timestamp": 1670368127000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.30.3759"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1991,
        12,
        1
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "12S",
    "published-print": {
      "date-parts": [
        [
          1991,
          12,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.30.3759",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1991,
        12,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1991 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1991-09-04",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1991-10-19",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}