Abstract
SrTiO3 thin films have been prepared on Pd-coated sapphire substrates by ion beam sputtering of a SrTiO3 target, and their dielectric properties have been studied. Oxygen flow introduction was necessary to obtain good insulating films. Dielectric constant εr values were 190 and 240 for 430°C and 540°C substrate temperatures, respectively. These εr values were not dependent on film thickness in the range from 200 nm down to 50 nm. A 53 nm-thick film indicated leakage current density of less than 10-8 A/cm2 at up to 2 V, along with a 230 εr value.
References
5
Referenced
105
{'key': ''}
{'year': '1981', 'key': ''}
(1981)10.1063/1.103867
/ Appl. Phys. Lett. (1990){'year': '1990', 'key': ''}
(1990){'year': '1991', 'key': ''}
(1991)
Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:58 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 6:55 p.m.) |
Indexed | 1 month, 2 weeks ago (July 7, 2025, 9:06 a.m.) |
Issued | 33 years, 11 months ago (Sept. 1, 1991) |
Published | 33 years, 11 months ago (Sept. 1, 1991) |
Published Print | 33 years, 11 months ago (Sept. 1, 1991) |
@article{Yamamichi_1991, title={SrTiO3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.2193}, DOI={10.1143/jjap.30.2193}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yamamichi, Shintaro and Sakuma, Toshiyuki and Koichi Takemura, Koichi Takemura and Yoichi Miyasaka, Yoichi Miyasaka}, year={1991}, month=sep, pages={2193} }