DOI: 10.1143/jjap.30.2159. Preparation and Switching Kinetics of Pb(Zr, Ti)O<sub>3</sub> Thin Films Deposited by Reactive Sputtering

Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive Sputtering

10.1143/jjap.30.2159

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Ferroelectric Pb(Zr, Ti)O3[PZT] thin films have been prepared on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595°C on highly (111)-oriented Pt films formed on SiO2/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50×50 µm2, the switching time and the switched charge density measured were 20 ns and 10 µC/cm2, respectively. The switching time was strongly dependent on the electrode area.

Bibliography

Takashi Hase, T. H., & Tadashi Shiosaki, T. S. (1991). Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive Sputtering. Japanese Journal of Applied Physics, 30(9S), 2159.

Authors 2

Takashi Hase Takashi Hase (first)
Tadashi Shiosaki Tadashi Shiosaki (additional)

References 7 Referenced 75

10.1063/1.337654 / J. Appl. Phys. (1986)
10.1143/JJAP.24S1.121 / Proc. the 5th Symp. Ultrasonic Electronics, Tokyo 1984, Jpn. J. Appl. Phys. (1985)
10.1063/1.341822 / J. Appl. Phys. (1988)
10.1063/1.97701 / Appl. Phys. Lett. (1987)
10.1109/JLT.1984.1073666 / IEEE J. Lightwave Tech. (1984)
10.1103/PhysRev.184.383 / Phys. Rev. (1969)
10.1103/PhysRev.35.269 / Phys. Rev. (1930)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:58 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 6:57 p.m.)
Indexed	2 months, 1 week ago (June 16, 2025, 9:07 a.m.)
Issued	33 years, 11 months ago (Sept. 1, 1991)
Published	33 years, 11 months ago (Sept. 1, 1991)
Published Print	33 years, 11 months ago (Sept. 1, 1991)

Funders 0

None

BibTeX

@article{Takashi_Hase_1991, title={Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive Sputtering}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.2159}, DOI={10.1143/jjap.30.2159}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Takashi Hase, Takashi Hase and Tadashi Shiosaki, Tadashi Shiosaki}, year={1991}, month=sep, pages={2159} }

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