Abstract
Pt-Ti alloy films were studied for use as a lower electrode of the ferroelectric lead zirconate titanate (PZT) thin film capacitor. Pt-Ti alloy films with different Ti/Pt atomic ratios were first prepared by rf sputtering. Subsequently, PZT thin films were deposited also by rf magnetron sputtering on the Pt-Ti alloy metals. The Ti/Pt ratio in the alloy was found to strongly affect the crystal structure formation and the composition of the PZT thin films. The Ti/Pt ratio range from 0.02 to 0.17 was shown to bring about a preferable perovskite-type structure and a reproducible constant composition. The effect of Ti atoms in the Pt-Ti lower electrode was discussed in connection with the Pb atom evaporation rate.
References
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Referenced
68
10.1126/science.246.4936.1400
/ Science (1989)
@article{Abe_1991, title={PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.2152}, DOI={10.1143/jjap.30.2152}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Abe, Kazuhide and Tomita, Hiroshi and Toyoda, Hiroshi and Motomasa Imai, Motomasa Imai and Yukari Yokote, Yukari Yokote}, year={1991}, month=sep, pages={2152} }