Abstract
MgO thin films were prepared on Si(100) substrates by RF magnetron sputtering using a Mg, or MgO target. The preferred orientation of MgO thin films using a Mg target was transformed from a (200) plane to a (111) plane as a function of substrate temperature. The preferred orientation of MgO thin films using a MgO target was observed only in the (200) plane.
References
4
Referenced
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 22, 2005, 8:54 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 6, 2022, 6:10 p.m.) |
Indexed | 1 month, 3 weeks ago (July 7, 2025, 9:06 a.m.) |
Issued | 34 years, 3 months ago (May 1, 1991) |
Published | 34 years, 3 months ago (May 1, 1991) |
Published Print | 34 years, 3 months ago (May 1, 1991) |
@article{Kaneko_1991, title={Preparation of MgO Thin Films by RF Magnetron Sputtering}, volume={30}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.30.1091}, DOI={10.1143/jjap.30.1091}, number={5R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kaneko, Yasuhisa and Mikoshiba, Nobuo and Tsutomu Yamashita, Tsutomu Yamashita}, year={1991}, month=may, pages={1091} }