DOI: 10.1143/jjap.3.377. Redistribution of Diffused Boron in Silicon by Thermal Oxidation

Redistribution of Diffused Boron in Silicon by Thermal Oxidation

10.1143/jjap.3.377

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Redistribution phenomena of diffused boron due thermal oxidation of silicon have been studied. Mathematical formulation of the redistribution phenomena is proposed and analytical solution of the problem is given approximately by the method of Green's function. Numerical calculations are carried out for several combinations of physical constants and compared with experiment. The redistribution phenomena are well described by the model in which the growth of oxide occurs at the silicon-silicon dioxide interface and out diffusion of boron through the oxide film is negligibly small. The experiments have been performed in the range of 1180°–1230°C under one atmospheric pressure of dry oxygen and the segregation coefficient is determined to be about 10 in this temperature range.

Bibliography

Kato, T., & Nishi, Y. (1964). Redistribution of Diffused Boron in Silicon by Thermal Oxidation. Japanese Journal of Applied Physics, 3(7), 377.

Authors 2

Taketoshi Kato (first)
Yoshio Nishi (additional)

References 10 Referenced 49

10.1002/j.1538-7305.1960.tb03947.x / Bell Syst. Tech. J. (1960)
{'key': '', 'first-page': '121', 'volume': '6', 'year': '1960', 'journal-title': 'Properties of Elemental and Compound Semiconductors, New York'} / Properties of Elemental and Compound Semiconductors, New York (1960)
10.1063/1.1702585 / J. Appl. Phys. (1962)
{'key': ''}
{'key': ''}
10.1143/JJAP.1.314 / Jpn. J. Appl. Phys. (1962)
{'key': '', 'first-page': '331', 'volume': '5', 'year': '1961', 'journal-title': 'Solid-State Electron.'} / Solid-State Electron. (1961)
10.1002/j.1538-7305.1962.tb02415.x / Bell Syst. Tech. J. (1962)
10.1063/1.1722419 / J. Appl. Phys. (1956)
10.1143/JJAP.2.765 / Jpn. J. Appl. Phys. (1963)

Dates

Type	When
Created	19 years, 9 months ago (Nov. 4, 2005, 2:30 a.m.)
Deposited	2 years, 9 months ago (Nov. 25, 2022, 7:42 a.m.)
Indexed	4 months, 4 weeks ago (April 1, 2025, 7:42 a.m.)
Issued	61 years, 1 month ago (July 1, 1964)
Published	61 years, 1 month ago (July 1, 1964)
Published Print	61 years, 1 month ago (July 1, 1964)

Funders 0

None

BibTeX

@article{Kato_1964, title={Redistribution of Diffused Boron in Silicon by Thermal Oxidation}, volume={3}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.3.377}, DOI={10.1143/jjap.3.377}, number={7}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kato, Taketoshi and Nishi, Yoshio}, year={1964}, month=jul, pages={377} }

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