DOI: 10.1143/jjap.29.l521. Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films

Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films

10.1143/jjap.29.l521

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Experimental fabrication of an XMOS transistor which has two insulated gates called upper-gate and lower-gate has been performed using lateral solid-phase epitaxy of a-Si film deposited by CVD of SiH4. The fabricated XMOS transistors exhibited no punch-through effect and good controllability of the upper-gate threshold voltage by the voltage applied to the lower-gate. It was found that the measured values of the slopes on the upper-gate threshold voltage control by the lower-gate voltage showed good agreement with the calculated value of the slope derived from a simple capacitance couple model.

Bibliography

Ishii, K., Hayashi, Y., & Sekigawa, T. (1990). Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films. Japanese Journal of Applied Physics, 29(4A), L521.

Authors 3

Kenichi Ishii (first)
Yutaka Hayashi (additional)
Toshihiro Sekigawa (additional)

References 7 Referenced 13

10.1016/0038-1101(84)90036-4 / Solid-State Electron. (1984)
{'key': ''}
{'year': '1985', 'key': ''} (1985)
10.1063/1.94217 / J. Appl. Phys. Lett. (1983)
10.1063/1.332275 / J. Appl. Phys. (1983)
10.1143/JJAP.27.L1983 / Jpn. J. Appl. Phys. (1988)
10.1109/JSSC.1975.1050600 / IEEE J. Solid-State Circuits SC- (1975)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:40 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 9:26 a.m.)
Indexed	4 months, 3 weeks ago (April 12, 2025, 1:26 a.m.)
Issued	35 years, 5 months ago (April 1, 1990)
Published	35 years, 5 months ago (April 1, 1990)
Published Print	35 years, 5 months ago (April 1, 1990)

Funders 0

None

BibTeX

@article{Ishii_1990, title={Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.l521}, DOI={10.1143/jjap.29.l521}, number={4A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishii, Kenichi and Hayashi, Yutaka and Sekigawa, Toshihiro}, year={1990}, month=apr, pages={L521} }

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