DOI: 10.1143/jjap.29.l490. Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water

Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water

10.1143/jjap.29.l490

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Water-adsorbed states on Si, native oxide and thermal oxide surfaces are investigated by means of thermal desorption spectroscopy. D2O is used to detect the water signals from these surfaces, which are separated from background H2O signals. The water desorption is 1/10 less than the hydrogen desorption. The amount of hydrogen adsorbed is largest on the Si surface and smallest on the thermal oxide surface. Four types of binding states of hydrogen are assigned to be SiO-H and Si-H on the silicon surface, Si-H in the native oxide, and Si-H in the interface between the native oxide and the silicon substrate.

Bibliography

Yabumoto, N., Minegishi, K., Komine, Y., & Saito, K. (1990). Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water. Japanese Journal of Applied Physics, 29(3A), L490.

Authors 4

Norikuni Yabumoto (first)
Kazushige Minegishi (additional)
Yukio Komine (additional)
Kazuyuki Saito (additional)

References 7 Referenced 27

{'year': '1989', 'key': ''} (1989)
10.1103/PhysRevB.29.3677 / Phys. Rev. B (1984)
10.1063/1.341489 / J. Appl. Phys. (1988)
10.1007/BF00616822 (1986)
10.1088/0022-3735/3/3/418 / J. Phys. E (1970)
10.1016/0042-207X(62)90978-8 / Vacuum (1962)
10.1143/JJAP.20.703 / Jpn. J. Appl. Phys. (1981)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:39 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 9:21 a.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:34 a.m.)
Issued	35 years, 6 months ago (March 1, 1990)
Published	35 years, 6 months ago (March 1, 1990)
Published Print	35 years, 6 months ago (March 1, 1990)

Funders 0

None

BibTeX

@article{Yabumoto_1990, title={Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.l490}, DOI={10.1143/jjap.29.l490}, number={3A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Yabumoto, Norikuni and Minegishi, Kazushige and Komine, Yukio and Saito, Kazuyuki}, year={1990}, month=mar, pages={L490} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:34:41Z",
    "timestamp": 1740134081457,
    "version": "3.37.3"
  },
  "reference-count": 7,
  "publisher": "IOP Publishing",
  "issue": "3A",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1990,
            3,
            1
          ]
        ],
        "date-time": "1990-03-01T00:00:00Z",
        "timestamp": 636249600000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            1990,
            3,
            1
          ]
        ],
        "date-time": "1990-03-01T00:00:00Z",
        "timestamp": 636249600000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1990,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n Water-adsorbed states on Si, native oxide and thermal oxide surfaces are investigated by means of thermal desorption spectroscopy. D<jats:sub>2</jats:sub>O is used to detect the water signals from these surfaces, which are separated from background H<jats:sub>2</jats:sub>O signals. The water desorption is 1/10 less than the hydrogen desorption. The amount of hydrogen adsorbed is largest on the Si surface and smallest on the thermal oxide surface. Four types of binding states of hydrogen are assigned to be SiO-H and Si-H on the silicon surface, Si-H in the native oxide, and Si-H in the interface between the native oxide and the silicon substrate. \n </jats:p>",
  "DOI": "10.1143/jjap.29.l490",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        2,
        23
      ]
    ],
    "date-time": "2005-02-23T01:39:37Z",
    "timestamp": 1109122777000
  },
  "page": "L490",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 27,
  "title": "Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water",
  "prefix": "10.35848",
  "volume": "29",
  "author": [
    {
      "given": "Norikuni",
      "family": "Yabumoto",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Kazushige",
      "family": "Minegishi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Yukio",
      "family": "Komine",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Kazuyuki",
      "family": "Saito",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "year": "1989",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3677",
      "DOI": "10.1103/PhysRevB.29.3677",
      "volume": "29",
      "year": "1984",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3516",
      "DOI": "10.1063/1.341489",
      "volume": "64",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "73",
      "DOI": "10.1007/BF00616822",
      "volume": "39",
      "year": "1986"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "237",
      "DOI": "10.1088/0022-3735/3/3/418",
      "volume": "3",
      "year": "1970",
      "journal-title": "J. Phys. E"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "203",
      "DOI": "10.1016/0042-207X(62)90978-8",
      "volume": "12",
      "year": "1962",
      "journal-title": "Vacuum"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "703",
      "DOI": "10.1143/JJAP.20.703",
      "volume": "20",
      "year": "1981",
      "journal-title": "Jpn. J. Appl. Phys."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.29.L490",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.29.L490/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.29.L490/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.29.L490/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        6
      ]
    ],
    "date-time": "2022-12-06T14:21:15Z",
    "timestamp": 1670336475000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.29.L490"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1990,
        3,
        1
      ]
    ]
  },
  "references-count": 7,
  "journal-issue": {
    "issue": "3A",
    "published-print": {
      "date-parts": [
        [
          1990,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.29.L490",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        1990,
        3,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 1990 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1989-10-09",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "1990-02-08",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}