DOI: 10.1143/jjap.29.l2163. High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

10.1143/jjap.29.l2163

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

High-voltage Schottky diodes have been fabricated on diamond epitaxial films with the structure: metal/undoped diamond/p+-type diamond. The films were epitaxially grown on synthesized single-crystal diamonds (100) by microwave plasma-assisted chemical vapor deposition (CVD) using H2 and CH4. B2H6 was used at B2H6/CH4=167 ppm for p+ diamond. Al Schottky electrodes and Ti ohmic electrodes were formed by an e-beam evaporation method and a thermal evaporation method, respectively. The forward current was independent of temperature because of the Fermi degeneracy in p+-type diamond. These diodes had a breakdown voltage of 520 V.

Bibliography

Shiomi, H., Nishibayashi, Y., & Fujimori, N. (1990). High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films. Japanese Journal of Applied Physics, 29(12A), L2163.

Authors 3

Hiromu Shiomi (first)
Yoshiki Nishibayashi (additional)
Naoji Fujimori (additional)

References 10 Referenced 37

{'key': '', 'first-page': '829', 'volume': '19', 'year': '1985', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1985)
10.1016/0038-1098(79)90645-8 / Solid State Commun. (1979)
{'key': '', 'first-page': '720', 'volume': '16', 'year': '1982', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1982)
{'key': '', 'first-page': '146', 'volume': '17', 'year': '1983', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1983)
{'year': '1970', 'key': ''} (1970)
10.1016/0042-207X(86)90279-4 / Vacuum (1986)
10.1143/JJAP.29.34 / Jpn. J. Appl. Phys. (1990)
10.1143/JJAP.28.758 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.28.L2153 / Jpn. J. Appl. Phys. (1989)
10.1109/55.46942 / IEEE Electron Device Lett. (1990)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 22, 2005, 8:49 p.m.)
Deposited	2 years, 8 months ago (Dec. 6, 2022, 8:45 a.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:34 a.m.)
Issued	34 years, 9 months ago (Dec. 1, 1990)
Published	34 years, 9 months ago (Dec. 1, 1990)
Published Print	34 years, 9 months ago (Dec. 1, 1990)

Funders 0

None

BibTeX

@article{Shiomi_1990, title={High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.l2163}, DOI={10.1143/jjap.29.l2163}, number={12A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Shiomi, Hiromu and Nishibayashi, Yoshiki and Fujimori, Naoji}, year={1990}, month=dec, pages={L2163} }

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