Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process. Such singularities are perceived by laser particle counters as small particles on wafers. It is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution. The origin of the pits is presumed to be some kind of defect in the melt-grown crystals.

Bibliography

Ryuta, J., Morita, E., Tanaka, T., & Shimanuki, Y. (1990). Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning. Japanese Journal of Applied Physics, 29(11A), L1947.

Authors 4
  1. Jiro Ryuta (first)
  2. Etsuro Morita (additional)
  3. Toshiro Tanaka (additional)
  4. Yasushi Shimanuki (additional)
References 2 Referenced 160
  1. {'key': '', 'first-page': '207', 'volume': '31', 'year': '1970', 'journal-title': 'RCA Rev.'} / RCA Rev. (1970)
  2. {'key': '', 'first-page': '171', 'volume': '132', 'year': '1985', 'journal-title': 'J. Electrochem. Sc.'} / J. Electrochem. Sc. (1985)
Dates
Type When
Created 20 years, 6 months ago (Feb. 22, 2005, 8:48 p.m.)
Deposited 2 years, 8 months ago (Dec. 6, 2022, 8:31 a.m.)
Indexed 2 months ago (June 25, 2025, 7:05 p.m.)
Issued 34 years, 9 months ago (Nov. 1, 1990)
Published 34 years, 9 months ago (Nov. 1, 1990)
Published Print 34 years, 9 months ago (Nov. 1, 1990)
Funders 0

None

@article{Ryuta_1990, title={Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning}, volume={29}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.29.l1947}, DOI={10.1143/jjap.29.l1947}, number={11A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ryuta, Jiro and Morita, Etsuro and Tanaka, Toshiro and Shimanuki, Yasushi}, year={1990}, month=nov, pages={L1947} }